J113
For Reference Only
| Part Number | J113 | ||||||||||||||||||
| PNEDA Part # | J113 | ||||||||||||||||||
| Description | JFET N-CH 35V 625MW TO92 | ||||||||||||||||||
| Manufacturer | ON Semiconductor | ||||||||||||||||||
| Unit Price |
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| In Stock | 26,631 | ||||||||||||||||||
| Warehouses | Shipped from Hong Kong SAR | ||||||||||||||||||
| Estimated Delivery | Apr 25 - Apr 30 (Choose Expedited Shipping) | ||||||||||||||||||
| Guarantee | Up to 1 year [PNEDA-Warranty]* | ||||||||||||||||||
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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J113 Resources
| Brand | ON Semiconductor |
| ECAD Module |
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| Mfr. Part Number | J113 |
| Category | Semiconductors › Transistors › Transistors - JFETs |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
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- It may take up to 24 hours before carriers display the info.
Notes
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J113 Specifications
| Manufacturer | ON Semiconductor |
| Series | - |
| FET Type | N-Channel |
| Voltage - Breakdown (V(BR)GSS) | 35V |
| Drain to Source Voltage (Vdss) | - |
| Current - Drain (Idss) @ Vds (Vgs=0) | 2mA @ 15V |
| Current Drain (Id) - Max | - |
| Voltage - Cutoff (VGS off) @ Id | 500mV @ 1µA |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Resistance - RDS(On) | 100 Ohms |
| Power - Max | 625mW |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Supplier Device Package | TO-92-3 |
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Manufacturer ON Semiconductor Series - FET Type P-Channel Voltage - Breakdown (V(BR)GSS) 30V Drain to Source Voltage (Vdss) - Current - Drain (Idss) @ Vds (Vgs=0) 7mA @ 15V Current Drain (Id) - Max - Voltage - Cutoff (VGS off) @ Id 3V @ 10nA Input Capacitance (Ciss) (Max) @ Vds - Resistance - RDS(On) 125 Ohms Power - Max 350mW Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package TO-92-3 |
Manufacturer ON Semiconductor Series - FET Type N-Channel Voltage - Breakdown (V(BR)GSS) 35V Drain to Source Voltage (Vdss) - Current - Drain (Idss) @ Vds (Vgs=0) 20mA @ 15V Current Drain (Id) - Max - Voltage - Cutoff (VGS off) @ Id 3V @ 1µA Input Capacitance (Ciss) (Max) @ Vds - Resistance - RDS(On) 30 Ohms Power - Max 625mW Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package TO-92-3 |
Manufacturer Toshiba Semiconductor and Storage Series - FET Type 2 N-Channel (Dual) Voltage - Breakdown (V(BR)GSS) - Drain to Source Voltage (Vdss) - Current - Drain (Idss) @ Vds (Vgs=0) 1.2mA @ 10V Current Drain (Id) - Max - Voltage - Cutoff (VGS off) @ Id 200mV @ 100nA Input Capacitance (Ciss) (Max) @ Vds 13pF @ 10V Resistance - RDS(On) - Power - Max 300mW Operating Temperature 125°C (TJ) Mounting Type Surface Mount Package / Case SC-74A, SOT-753 Supplier Device Package SMV |
