Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

SI7997DP-T1-GE3

SI7997DP-T1-GE3

For Reference Only

Part Number SI7997DP-T1-GE3
PNEDA Part # SI7997DP-T1-GE3
Description MOSFET 2P-CH 30V 60A PPAK SO-8
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 14,448
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 22 - May 27 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI7997DP-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI7997DP-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
SI7997DP-T1-GE3, SI7997DP-T1-GE3 Datasheet (Total Pages: 13, Size: 311.15 KB)
PDFSI7997DP-T1-GE3 Datasheet Cover
SI7997DP-T1-GE3 Datasheet Page 2 SI7997DP-T1-GE3 Datasheet Page 3 SI7997DP-T1-GE3 Datasheet Page 4 SI7997DP-T1-GE3 Datasheet Page 5 SI7997DP-T1-GE3 Datasheet Page 6 SI7997DP-T1-GE3 Datasheet Page 7 SI7997DP-T1-GE3 Datasheet Page 8 SI7997DP-T1-GE3 Datasheet Page 9 SI7997DP-T1-GE3 Datasheet Page 10 SI7997DP-T1-GE3 Datasheet Page 11

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • SI7997DP-T1-GE3 Datasheet
  • where to find SI7997DP-T1-GE3
  • Vishay Siliconix

  • Vishay Siliconix SI7997DP-T1-GE3
  • SI7997DP-T1-GE3 PDF Datasheet
  • SI7997DP-T1-GE3 Stock

  • SI7997DP-T1-GE3 Pinout
  • Datasheet SI7997DP-T1-GE3
  • SI7997DP-T1-GE3 Supplier

  • Vishay Siliconix Distributor
  • SI7997DP-T1-GE3 Price
  • SI7997DP-T1-GE3 Distributor

SI7997DP-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET Type2 P-Channel (Dual)
FET FeatureStandard
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C60A
Rds On (Max) @ Id, Vgs5.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs160nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds6200pF @ 15V
Power - Max46W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CasePowerPAK® SO-8 Dual
Supplier Device PackagePowerPAK® SO-8 Dual

The Products You May Be Interested In

BSL306NH6327XTSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

Automotive, AEC-Q101, OptiMOS™

FET Type

2 N-Channel (Dual)

FET Feature

Logic Level Gate, 4.5V Drive

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

2.3A

Rds On (Max) @ Id, Vgs

57mOhm @ 2.3A, 10V

Vgs(th) (Max) @ Id

2V @ 11µA

Gate Charge (Qg) (Max) @ Vgs

1.6nC @ 5V

Input Capacitance (Ciss) (Max) @ Vds

275pF @ 15V

Power - Max

500mW

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

SOT-23-6 Thin, TSOT-23-6

Supplier Device Package

PG-TSOP-6-6

EFC2J017NUZTDG

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

2 N-Channel (Dual) Common Drain

FET Feature

Logic Level Gate, 2.5V Drive

Drain to Source Voltage (Vdss)

-

Current - Continuous Drain (Id) @ 25°C

-

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

1.3V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

95nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

-

Power - Max

2.5W

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Package / Case

6-XFBGA, WLCSP

Supplier Device Package

6-WLCSP (1.77x3.05)

APTC60AM83BC1G

Microsemi

Manufacturer

Microsemi Corporation

Series

CoolMOS™

FET Type

3 N Channel (Phase Leg + Boost Chopper)

FET Feature

Super Junction

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

36A

Rds On (Max) @ Id, Vgs

83mOhm @ 24.5A, 10V

Vgs(th) (Max) @ Id

5V @ 3mA

Gate Charge (Qg) (Max) @ Vgs

250nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

7200pF @ 25V

Power - Max

250W

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Chassis Mount

Package / Case

SP1

Supplier Device Package

SP1

DMN3033LSD-13

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

2 N-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

6.9A

Rds On (Max) @ Id, Vgs

20mOhm @ 6.9A, 10V

Vgs(th) (Max) @ Id

2.1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

13nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

725pF @ 15V

Power - Max

2W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154", 3.90mm Width)

Supplier Device Package

8-SOP

GWS4621L

Renesas Electronics America Inc.

Manufacturer

Renesas Electronics America Inc.

Series

-

FET Type

2 N-Channel (Dual) Common Drain

FET Feature

Standard

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

10.1A (Ta)

Rds On (Max) @ Id, Vgs

9.8mOhm @ 3A, 4.5V

Vgs(th) (Max) @ Id

1.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

11nC @ 4V

Input Capacitance (Ciss) (Max) @ Vds

1125pF @ 10V

Power - Max

3.6W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

4-XFLGA, CSP

Supplier Device Package

4-WLCSP (1.82x1.82)

Recently Sold

PE-64934NL

PE-64934NL

Pulse Electronics Network

XFRMR T1/CEPT/ISDN-PRI 1:1

NJM2121M

NJM2121M

NJR Corporation/NJRC

IC OPAMP GP 2 CIRCUIT 8DMP

PI6C49X0204CWIE

PI6C49X0204CWIE

Diodes Incorporated

IC CLOCK BUFFER 1:4 200MHZ 8SOIC

DS1216C

DS1216C

Maxim Integrated

IC SMART/RAM 5V 64K/256K 28-DIP

74FCT3807SOGI

74FCT3807SOGI

IDT, Integrated Device Technology

IC CLK BUFFER 1:10 100MHZ 20SOIC

CDBK0520L-HF

CDBK0520L-HF

Comchip Technology

DIODE SCHOTTKY 20V 500MA SOD123F

ADM3202ARN

ADM3202ARN

Analog Devices

IC TRANSCEIVER FULL 2/2 16SOIC

S29JL064J60TFI003

S29JL064J60TFI003

Cypress Semiconductor

IC FLASH 64M PARALLEL 48TSOP

ADA4096-2ARMZ

ADA4096-2ARMZ

Analog Devices

IC OPAMP GP 2 CIRCUIT 8MSOP

SP0503BAHT

SP0503BAHT

Littelfuse

TVS DIODE 5.5V 8.5V SOT143-4

IRF9321TRPBF

IRF9321TRPBF

Infineon Technologies

MOSFET P-CH 30V 15A 8-SOIC

IRF7470PBF

IRF7470PBF

Infineon Technologies

MOSFET N-CH 40V 10A 8-SOIC