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2SK2719(F) Datasheet

2SK2719(F) Datasheet
Total Pages: 5
Size: 288.78 KB
Toshiba Semiconductor and Storage
This datasheet covers 1 part numbers: 2SK2719(F)
2SK2719(F) Datasheet Page 1
2SK2719(F) Datasheet Page 2
2SK2719(F) Datasheet Page 3
2SK2719(F) Datasheet Page 4
2SK2719(F) Datasheet Page 5
2SK2719(F)

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

900V

Current - Continuous Drain (Id) @ 25°C

3A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

4.3Ohm @ 1.5A, 10V

Vgs(th) (Max) @ Id

4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

25nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

750pF @ 25V

FET Feature

-

Power Dissipation (Max)

125W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-3P(N)

Package / Case

TO-3P-3, SC-65-3