Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

BSC350N20NSFDATMA1 Datasheet

BSC350N20NSFDATMA1 Datasheet
Total Pages: 11
Size: 931.05 KB
Infineon Technologies
This datasheet covers 1 part numbers: BSC350N20NSFDATMA1
BSC350N20NSFDATMA1 Datasheet Page 1
BSC350N20NSFDATMA1 Datasheet Page 2
BSC350N20NSFDATMA1 Datasheet Page 3
BSC350N20NSFDATMA1 Datasheet Page 4
BSC350N20NSFDATMA1 Datasheet Page 5
BSC350N20NSFDATMA1 Datasheet Page 6
BSC350N20NSFDATMA1 Datasheet Page 7
BSC350N20NSFDATMA1 Datasheet Page 8
BSC350N20NSFDATMA1 Datasheet Page 9
BSC350N20NSFDATMA1 Datasheet Page 10
BSC350N20NSFDATMA1 Datasheet Page 11
BSC350N20NSFDATMA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

35A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

35mOhm @ 35A, 10V

Vgs(th) (Max) @ Id

4V @ 90µA

Gate Charge (Qg) (Max) @ Vgs

30nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2410pF @ 100V

FET Feature

-

Power Dissipation (Max)

150W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-TDSON-8-1

Package / Case

8-PowerTDFN