Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

BUK7E1R6-30E Datasheet

BUK7E1R6-30E Datasheet
Total Pages: 14
Size: 326.41 KB
NXP
This datasheet covers 1 part numbers: BUK7E1R6-30E,127
BUK7E1R6-30E Datasheet Page 1
BUK7E1R6-30E Datasheet Page 2
BUK7E1R6-30E Datasheet Page 3
BUK7E1R6-30E Datasheet Page 4
BUK7E1R6-30E Datasheet Page 5
BUK7E1R6-30E Datasheet Page 6
BUK7E1R6-30E Datasheet Page 7
BUK7E1R6-30E Datasheet Page 8
BUK7E1R6-30E Datasheet Page 9
BUK7E1R6-30E Datasheet Page 10
BUK7E1R6-30E Datasheet Page 11
BUK7E1R6-30E Datasheet Page 12
BUK7E1R6-30E Datasheet Page 13
BUK7E1R6-30E Datasheet Page 14

Manufacturer

NXP USA Inc.

Series

TrenchMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

120A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.6mOhm @ 25A, 10V

Vgs(th) (Max) @ Id

4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

154nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

11960pF @ 25V

FET Feature

-

Power Dissipation (Max)

349W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

I2PAK

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA