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BUK9E1R6-30E Datasheet

BUK9E1R6-30E Datasheet
Total Pages: 14
Size: 334.15 KB
NXP
This datasheet covers 1 part numbers: BUK9E1R6-30E,127
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Manufacturer

NXP USA Inc.

Series

TrenchMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

120A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

5V, 10V

Rds On (Max) @ Id, Vgs

1.4mOhm @ 25A, 10V

Vgs(th) (Max) @ Id

2.1V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

113nC @ 5V

Vgs (Max)

±10V

Input Capacitance (Ciss) (Max) @ Vds

16150pF @ 25V

FET Feature

-

Power Dissipation (Max)

349W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

I2PAK

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA