DMN1004UFDF-7 Datasheet
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Manufacturer Diodes Incorporated Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 12V Current - Continuous Drain (Id) @ 25°C 15A (Ta) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V Rds On (Max) @ Id, Vgs 4.8mOhm @ 15A, 4.5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 47nC @ 10V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 2385pF @ 6V FET Feature - Power Dissipation (Max) 2.1W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package U-DFN2020-6 Package / Case 6-UDFN Exposed Pad |
Manufacturer Diodes Incorporated Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 12V Current - Continuous Drain (Id) @ 25°C 15A (Ta) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V Rds On (Max) @ Id, Vgs 4.8mOhm @ 15A, 4.5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 47nC @ 10V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 2385pF @ 6V FET Feature - Power Dissipation (Max) 2.1W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package U-DFN2020-6 Package / Case 6-UDFN Exposed Pad |
