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DMN2009LSS-13 Datasheet

DMN2009LSS-13 Datasheet
Total Pages: 5
Size: 232.39 KB
Diodes Incorporated
This datasheet covers 1 part numbers: DMN2009LSS-13
DMN2009LSS-13 Datasheet Page 1
DMN2009LSS-13 Datasheet Page 2
DMN2009LSS-13 Datasheet Page 3
DMN2009LSS-13 Datasheet Page 4
DMN2009LSS-13 Datasheet Page 5
DMN2009LSS-13

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

12A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 10V

Rds On (Max) @ Id, Vgs

8mOhm @ 12A, 10V

Vgs(th) (Max) @ Id

1.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

58.3nC @ 10V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

2555pF @ 10V

FET Feature

-

Power Dissipation (Max)

2W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SOP

Package / Case

8-SOIC (0.154", 3.90mm Width)