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EPC2045ENGRT Datasheet

EPC2045ENGRT Datasheet
Total Pages: 6
Size: 1,019.92 KB
EPC
This datasheet covers 2 part numbers: EPC2045ENGRT, EPC2045
EPC2045ENGRT Datasheet Page 1
EPC2045ENGRT Datasheet Page 2
EPC2045ENGRT Datasheet Page 3
EPC2045ENGRT Datasheet Page 4
EPC2045ENGRT Datasheet Page 5
EPC2045ENGRT Datasheet Page 6

Manufacturer

EPC

Series

eGaN®

FET Type

N-Channel

Technology

GaNFET (Gallium Nitride)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

16A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

5V

Rds On (Max) @ Id, Vgs

7mOhm @ 16A, 5V

Vgs(th) (Max) @ Id

2.5V @ 5mA

Gate Charge (Qg) (Max) @ Vgs

6.5nC @ 5V

Vgs (Max)

+6V, -4V

Input Capacitance (Ciss) (Max) @ Vds

685pF @ 50V

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

Die

Package / Case

Die

EPC2045

EPC

Manufacturer

EPC

Series

eGaN®

FET Type

N-Channel

Technology

GaNFET (Gallium Nitride)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

16A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

5V

Rds On (Max) @ Id, Vgs

7mOhm @ 16A, 5V

Vgs(th) (Max) @ Id

2.5V @ 5mA

Gate Charge (Qg) (Max) @ Vgs

6.5nC @ 5V

Vgs (Max)

+6V, -4V

Input Capacitance (Ciss) (Max) @ Vds

685pF @ 50V

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

Die

Package / Case

Die