PHKD6N02LT Datasheet
PHKD6N02LT Datasheet
Total Pages: 13
Size: 743.74 KB
Nexperia
This datasheet covers 1 part numbers:
PHKD6N02LT,518
|
Manufacturer Nexperia USA Inc. Series TrenchMOS™ FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 10.9A Rds On (Max) @ Id, Vgs 20mOhm @ 3A, 5V Vgs(th) (Max) @ Id 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 15.3nC @ 5V Input Capacitance (Ciss) (Max) @ Vds 950pF @ 10V Power - Max 4.17W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 8-SOIC (0.154", 3.90mm Width) Supplier Device Package 8-SO |
