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SI2356DS-T1-GE3 Datasheet

SI2356DS-T1-GE3 Datasheet
Total Pages: 10
Size: 232.62 KB
Vishay Siliconix
This datasheet covers 1 part numbers: SI2356DS-T1-GE3
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SI2356DS-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

4.3A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 10V

Rds On (Max) @ Id, Vgs

51mOhm @ 3.2A, 10V

Vgs(th) (Max) @ Id

1.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

13nC @ 10V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

370pF @ 20V

FET Feature

-

Power Dissipation (Max)

960mW (Ta), 1.7W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-236

Package / Case

TO-236-3, SC-59, SOT-23-3