SISF02DN-T1-GE3 Datasheet
SISF02DN-T1-GE3 Datasheet
Total Pages: 9
Size: 230.08 KB
Vishay Siliconix
This datasheet covers 1 part numbers:
SISF02DN-T1-GE3
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Manufacturer Vishay Siliconix Series TrenchFET® Gen IV FET Type 2 N-Channel (Dual) Common Drain FET Feature Standard Drain to Source Voltage (Vdss) 25V Current - Continuous Drain (Id) @ 25°C 30.5A (Ta), 60A (Tc) Rds On (Max) @ Id, Vgs 3.5mOhm @ 7A, 10V Vgs(th) (Max) @ Id 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 56nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 2650pF @ 10V Power - Max 5.2W (Ta), 69.4W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case PowerPAK® 1212-8SCD Supplier Device Package PowerPAK® 1212-8SCD |
