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SP8M10FU6TB Datasheet

SP8M10FU6TB Datasheet
Total Pages: 6
Size: 77.55 KB
Rohm Semiconductor
This datasheet covers 2 part numbers: SP8M10FU6TB, SP8M10TB
SP8M10FU6TB Datasheet Page 1
SP8M10FU6TB Datasheet Page 2
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SP8M10FU6TB Datasheet Page 5
SP8M10FU6TB Datasheet Page 6
SP8M10FU6TB

Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

-

FET Type

N and P-Channel

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

7A, 4.5A

Rds On (Max) @ Id, Vgs

24mOhm @ 7A, 10V

Vgs(th) (Max) @ Id

2.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

11.8nC @ 5V

Input Capacitance (Ciss) (Max) @ Vds

600pF @ 10V

Power - Max

2W

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154", 3.90mm Width)

Supplier Device Package

8-SOP

SP8M10TB

Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

-

FET Type

N and P-Channel

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

7A, 4.5A

Rds On (Max) @ Id, Vgs

25mOhm @ 7A, 10V

Vgs(th) (Max) @ Id

2.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

8.4nC @ 5V

Input Capacitance (Ciss) (Max) @ Vds

600pF @ 10V

Power - Max

2W

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154", 3.90mm Width)

Supplier Device Package

8-SOP