Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

SUD50P04-23-GE3 Datasheet

SUD50P04-23-GE3 Datasheet
Total Pages: 8
Size: 93.51 KB
Vishay Siliconix
This datasheet covers 2 part numbers: SUD50P04-23-GE3, SUD50P04-23-E3
SUD50P04-23-GE3 Datasheet Page 1
SUD50P04-23-GE3 Datasheet Page 2
SUD50P04-23-GE3 Datasheet Page 3
SUD50P04-23-GE3 Datasheet Page 4
SUD50P04-23-GE3 Datasheet Page 5
SUD50P04-23-GE3 Datasheet Page 6
SUD50P04-23-GE3 Datasheet Page 7
SUD50P04-23-GE3 Datasheet Page 8
SUD50P04-23-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

8.2A (Ta), 20A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

23mOhm @ 15A, 10V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

65nC @ 10V

Vgs (Max)

±16V

Input Capacitance (Ciss) (Max) @ Vds

1880pF @ 20V

FET Feature

-

Power Dissipation (Max)

3.1W (Ta), 45.4W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-252, (D-Pak)

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

SUD50P04-23-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

8.2A (Ta), 20A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

23mOhm @ 15A, 10V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

65nC @ 10V

Vgs (Max)

±16V

Input Capacitance (Ciss) (Max) @ Vds

1880pF @ 20V

FET Feature

-

Power Dissipation (Max)

3.1W (Ta), 45.4W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-252, (D-Pak)

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63