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1N3767R

1N3767R

For Reference Only

Part Number 1N3767R
PNEDA Part # 1N3767R
Description DIODE GEN PURP REV 900V 35A DO5
Manufacturer GeneSiC Semiconductor
Unit Price Request a Quote
In Stock 4,338
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 3 - Jun 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

1N3767R Resources

Brand GeneSiC Semiconductor
ECAD Module ECAD
Mfr. Part Number1N3767R
CategorySemiconductorsDiodes & RectifiersRectifiers - Single
Datasheet
1N3767R, 1N3767R Datasheet (Total Pages: 3, Size: 763.53 KB)
PDF1N3767R Datasheet Cover
1N3767R Datasheet Page 2 1N3767R Datasheet Page 3

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1N3767R Specifications

ManufacturerGeneSiC Semiconductor
Series-
Diode TypeStandard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max)900V
Current - Average Rectified (Io)35A
Voltage - Forward (Vf) (Max) @ If1.2V @ 35A
SpeedStandard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr)-
Current - Reverse Leakage @ Vr10µA @ 50V
Capacitance @ Vr, F-
Mounting TypeChassis, Stud Mount
Package / CaseDO-203AB, DO-5, Stud
Supplier Device PackageDO-5
Operating Temperature - Junction-65°C ~ 190°C

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