1N6479HE3/97
For Reference Only
| Part Number | 1N6479HE3/97 |
| PNEDA Part # | 1N6479HE3-97 |
| Description | DIODE GEN PURP 100V 1A DO213AB |
| Manufacturer | Vishay Semiconductor Diodes Division |
| Unit Price | Request a Quote |
| In Stock | 5,472 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 10 - Jun 15 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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1N6479HE3/97 Resources
| Brand | Vishay Semiconductor Diodes Division |
| ECAD Module |
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| Mfr. Part Number | 1N6479HE3/97 |
| Category | Semiconductors › Diodes & Rectifiers › Rectifiers - Single |
| Datasheet |
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1N6479HE3/97 Specifications
| Manufacturer | Vishay Semiconductor Diodes Division |
| Series | SUPERECTIFIER® |
| Diode Type | Standard |
| Voltage - DC Reverse (Vr) (Max) | 100V |
| Current - Average Rectified (Io) | 1A |
| Voltage - Forward (Vf) (Max) @ If | 1.1V @ 1A |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | - |
| Current - Reverse Leakage @ Vr | 10µA @ 100V |
| Capacitance @ Vr, F | 8pF @ 4V, 1MHz |
| Mounting Type | Surface Mount |
| Package / Case | DO-213AB, MELF (Glass) |
| Supplier Device Package | DO-213AB |
| Operating Temperature - Junction | -65°C ~ 175°C |
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Manufacturer Microsemi Corporation Series * Diode Type - Voltage - DC Reverse (Vr) (Max) - Current - Average Rectified (Io) - Voltage - Forward (Vf) (Max) @ If - Speed - Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr - Capacitance @ Vr, F - Mounting Type - Package / Case - Supplier Device Package - Operating Temperature - Junction - |
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