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2N5179

2N5179

For Reference Only

Part Number 2N5179
PNEDA Part # 2N5179
Description RF TRANS NPN 12V 2GHZ TO72
Manufacturer Central Semiconductor Corp
Unit Price Request a Quote
In Stock 8,232
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 4 - Jun 9 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

2N5179 Resources

Brand Central Semiconductor Corp
ECAD Module ECAD
Mfr. Part Number2N5179
CategorySemiconductorsTransistorsTransistors - Bipolar (BJT) - RF
Datasheet
2N5179, 2N5179 Datasheet (Total Pages: 3, Size: 616.7 KB)
PDF2N5179 Datasheet Cover
2N5179 Datasheet Page 2 2N5179 Datasheet Page 3

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2N5179 Specifications

ManufacturerCentral Semiconductor Corp
Series-
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)12V
Frequency - Transition2GHz
Noise Figure (dB Typ @ f)4.5dB @ 200MHz
Gain15dB
Power - Max200mW
DC Current Gain (hFE) (Min) @ Ic, Vce25 @ 3mA, 1V
Current - Collector (Ic) (Max)50mA
Operating Temperature-65°C ~ 200°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-206AF, TO-72-4 Metal Can
Supplier Device PackageTO-72

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Voltage - Collector Emitter Breakdown (Max)

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1.7dB ~ 1.9dB @ 1GHz ~ 2GHz

Gain

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Power - Max

100mW

DC Current Gain (hFE) (Min) @ Ic, Vce

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Operating Temperature

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2SA1977-A

CEL

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Voltage - Collector Emitter Breakdown (Max)

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Frequency - Transition

8.5GHz

Noise Figure (dB Typ @ f)

1.5dB @ 1GHz

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DC Current Gain (hFE) (Min) @ Ic, Vce

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Current - Collector (Ic) (Max)

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Operating Temperature

150°C (TJ)

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TO-236-3, SC-59, SOT-23-3

Supplier Device Package

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Manufacturer

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Series

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Transistor Type

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Voltage - Collector Emitter Breakdown (Max)

6V

Frequency - Transition

12GHz

Noise Figure (dB Typ @ f)

1.7dB @ 2GHz

Gain

13.5dB

Power - Max

205mW

DC Current Gain (hFE) (Min) @ Ic, Vce

75 @ 30mA, 3V

Current - Collector (Ic) (Max)

100mA

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Manufacturer

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Series

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Noise Figure (dB Typ @ f)

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DC Current Gain (hFE) (Min) @ Ic, Vce

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Current - Collector (Ic) (Max)

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Operating Temperature

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