Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

2N6760

2N6760

For Reference Only

Part Number 2N6760
PNEDA Part # 2N6760
Description MOSFET N-CH 400V TO-3
Manufacturer Microsemi
Unit Price Request a Quote
In Stock 8,784
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 11 - May 16 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

2N6760 Resources

Brand Microsemi
ECAD Module ECAD
Mfr. Part Number2N6760
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • 2N6760 Datasheet
  • where to find 2N6760
  • Microsemi

  • Microsemi 2N6760
  • 2N6760 PDF Datasheet
  • 2N6760 Stock

  • 2N6760 Pinout
  • Datasheet 2N6760
  • 2N6760 Supplier

  • Microsemi Distributor
  • 2N6760 Price
  • 2N6760 Distributor

2N6760 Specifications

ManufacturerMicrosemi Corporation
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)400V
Current - Continuous Drain (Id) @ 25°C5.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.22Ohm @ 5.5A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs39nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds-
FET Feature-
Power Dissipation (Max)4W (Ta), 75W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-204AA
Package / CaseTO-204AA, TO-3

The Products You May Be Interested In

TSM60NB260CI C0G

Taiwan Semiconductor Corporation

Manufacturer

Taiwan Semiconductor Corporation

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

13A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

260mOhm @ 3.9A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

30nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1273pF @ 100V

FET Feature

-

Power Dissipation (Max)

32.1W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

ITO-220AB

Package / Case

TO-220-3 Full Pack, Isolated Tab

SUD50P08-26-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

80V

Current - Continuous Drain (Id) @ 25°C

50A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

26mOhm @ 12.9A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

155nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

5160pF @ 40V

FET Feature

-

Power Dissipation (Max)

8.3W (Ta), 136W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-252, (D-Pak)

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

IPB100N06S3-04

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

100A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

4.1mOhm @ 80A, 10V

Vgs(th) (Max) @ Id

4V @ 150µA

Gate Charge (Qg) (Max) @ Vgs

314nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

14230pF @ 25V

FET Feature

-

Power Dissipation (Max)

214W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-TO263-3-2

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

IXTA48P05T

IXYS

Manufacturer

IXYS

Series

TrenchP™

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

50V

Current - Continuous Drain (Id) @ 25°C

48A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

30mOhm @ 24A, 10V

Vgs(th) (Max) @ Id

4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

53nC @ 10V

Vgs (Max)

±15V

Input Capacitance (Ciss) (Max) @ Vds

3660pF @ 25V

FET Feature

-

Power Dissipation (Max)

150W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-263 (IXTA)

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Manufacturer

IXYS

Series

TrenchMV™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

75V

Current - Continuous Drain (Id) @ 25°C

220A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

4.5mOhm @ 25A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

165nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

7700pF @ 25V

FET Feature

-

Power Dissipation (Max)

480W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-3P

Package / Case

TO-3P-3, SC-65-3

Recently Sold

MAX8556ETE+T

MAX8556ETE+T

Maxim Integrated

IC REG LINEAR POS ADJ 4A 16TQFN

24LC01BT-I/OT

24LC01BT-I/OT

Microchip Technology

IC EEPROM 1K I2C 400KHZ SOT23-5

MC33161DMR2G

MC33161DMR2G

ON Semiconductor

IC MONITOR VOLTAGE UNIV 8MICRO

PCA8574AD,518

PCA8574AD,518

NXP

IC I/O EXPANDER I2C 8B 16SOIC

MP5505AGL-Z

MP5505AGL-Z

Monolithic Power Systems Inc.

IC REG BOOST 7V 4A

ADM2484EBRWZ

ADM2484EBRWZ

Analog Devices

DGTL ISO 5KV RS422/RS485 16SOIC

3314G-1-103E

3314G-1-103E

Bourns

TRIMMER 10K OHM 0.25W GW TOP ADJ

LT3469ETS8#TRPBF

LT3469ETS8#TRPBF

Linear Technology/Analog Devices

IC AMP DVR W/REG 1.3MHZ TSOT23-8

W25X20CLSNIG

W25X20CLSNIG

Winbond Electronics

IC FLASH 2M SPI 104MHZ 8SOIC

PIC32MX340F512H-80I/PT

PIC32MX340F512H-80I/PT

Microchip Technology

IC MCU 32BIT 512KB FLASH 64TQFP

MCP6042-I/SN

MCP6042-I/SN

Microchip Technology

IC OPAMP GP 2 CIRCUIT 8SOIC

MP101301

MP101301

ZF Electronics

SENSOR HALL DIGITAL WIRE LEADS