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2SK2845(TE16L1,Q)

2SK2845(TE16L1,Q)

For Reference Only

Part Number 2SK2845(TE16L1,Q)
PNEDA Part # 2SK2845-TE16L1-Q
Description MOSFET N-CH 900V 1A DP
Manufacturer Toshiba Semiconductor and Storage
Unit Price Request a Quote
In Stock 5,202
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 15 - Jun 20 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

2SK2845(TE16L1 Resources

Brand Toshiba Semiconductor and Storage
ECAD Module ECAD
Mfr. Part Number2SK2845(TE16L1,Q)
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
2SK2845(TE16L1, 2SK2845(TE16L1 Datasheet (Total Pages: 6, Size: 403.44 KB)
PDF2SK2845(TE16L1 Datasheet Cover
2SK2845(TE16L1 Datasheet Page 2 2SK2845(TE16L1 Datasheet Page 3 2SK2845(TE16L1 Datasheet Page 4 2SK2845(TE16L1 Datasheet Page 5 2SK2845(TE16L1 Datasheet Page 6

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2SK2845(TE16L1 Specifications

ManufacturerToshiba Semiconductor and Storage
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)900V
Current - Continuous Drain (Id) @ 25°C1A (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs9Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs15nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds350pF @ 25V
FET Feature-
Power Dissipation (Max)40W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageDP
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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