Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

2SK3827

2SK3827

For Reference Only

Part Number 2SK3827
PNEDA Part # 2SK3827
Description MOSFET N-CH 100V 40A TO-220
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 8,352
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 11 - Jun 16 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

2SK3827 Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part Number2SK3827
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
2SK3827, 2SK3827 Datasheet (Total Pages: 4, Size: 38.47 KB)
PDF2SK3827 Datasheet Cover
2SK3827 Datasheet Page 2 2SK3827 Datasheet Page 3 2SK3827 Datasheet Page 4

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • 2SK3827 Datasheet
  • where to find 2SK3827
  • ON Semiconductor

  • ON Semiconductor 2SK3827
  • 2SK3827 PDF Datasheet
  • 2SK3827 Stock

  • 2SK3827 Pinout
  • Datasheet 2SK3827
  • 2SK3827 Supplier

  • ON Semiconductor Distributor
  • 2SK3827 Price
  • 2SK3827 Distributor

2SK3827 Specifications

ManufacturerON Semiconductor
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C40A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4V, 10V
Rds On (Max) @ Id, Vgs34mOhm @ 20A, 10V
Vgs(th) (Max) @ Id2.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs79nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds4200pF @ 20V
FET Feature-
Power Dissipation (Max)1.75W (Ta), 60W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220
Package / CaseTO-220-3

The Products You May Be Interested In

SIHG20N50C-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

20A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

270mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

76nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

2942pF @ 25V

FET Feature

-

Power Dissipation (Max)

250W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247AC

Package / Case

TO-247-3

MCU60N04-TP

Micro Commercial Co

Manufacturer

Micro Commercial Co

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

60A

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

13mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

29nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1800pF @ 20V

FET Feature

-

Power Dissipation (Max)

1.25W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D-Pak

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

RJK4006DPD-WS#J2

Renesas Electronics America

Manufacturer

Renesas Electronics America

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

400V

Current - Continuous Drain (Id) @ 25°C

8A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

800mOhm @ 4A, 10V

Vgs(th) (Max) @ Id

4.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

20nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

620pF @ 25V

FET Feature

-

Power Dissipation (Max)

65W (Tc)

Operating Temperature

150°C

Mounting Type

Surface Mount

Supplier Device Package

MP-3A

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

AOB442

Alpha & Omega Semiconductor

Manufacturer

Alpha & Omega Semiconductor Inc.

Series

SDMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

21A (Ta), 105A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

4.2mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

2.3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

90nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

5600pF @ 20V

FET Feature

-

Power Dissipation (Max)

3.5W (Ta), 150W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-263 (D²Pak)

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

IPP47N10SL26AKSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

SIPMOS®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

47A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

26mOhm @ 33A, 10V

Vgs(th) (Max) @ Id

2V @ 2mA

Gate Charge (Qg) (Max) @ Vgs

135nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2500pF @ 25V

FET Feature

-

Power Dissipation (Max)

175W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO220-3-1

Package / Case

TO-220-3

Recently Sold

6TPE330MIL

6TPE330MIL

Panasonic Electronic Components

CAP TANT POLY 330UF 6.3V 2917

CY2304SXI-1

CY2304SXI-1

Cypress Semiconductor

IC CLK ZDB 4OUT 133MHZ 8SOIC

MAX4162ESA+

MAX4162ESA+

Maxim Integrated

IC OPAMP GP 1 CIRCUIT 8SOIC

UPD720201K8-711-BAC-A

UPD720201K8-711-BAC-A

Renesas Electronics America

IC HOST CTRLR USB 3.0 68QFN

SI4410DYPBF

SI4410DYPBF

Infineon Technologies

MOSFET N-CH 30V 10A 8-SOIC

JS28F128J3D75A

JS28F128J3D75A

Micron Technology Inc.

IC FLASH 128M PARALLEL 56TSOP

AT90S1200-4SC

AT90S1200-4SC

Microchip Technology

IC MCU 8BIT 1KB FLASH 20SOIC

SIT9102AI-243N25E200.00000X

SIT9102AI-243N25E200.00000X

SiTIME

MEMS OSC XO 200.0000MHZ LVDS SMD

LPC2388FBD144,551

LPC2388FBD144,551

NXP

IC MCU 32BIT 512KB FLASH 144LQFP

R5F1076CGSP#V0

R5F1076CGSP#V0

Renesas Electronics America

IC MCU 16BIT 32KB FLASH 20LSSOP

SP0506BAATG

SP0506BAATG

Littelfuse

TVS DIODE 5.5V 8.5V 8MSOP

IRF7811A

IRF7811A

Infineon Technologies

MOSFET N-CH 28V 11.4A 8-SOIC