55GN01CA-TB-E
For Reference Only
| Part Number | 55GN01CA-TB-E |
| PNEDA Part # | 55GN01CA-TB-E |
| Description | RF TRANS NPN 10V 4.5GHZ 3CP |
| Manufacturer | ON Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 3,690 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 25 - May 30 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
55GN01CA-TB-E Resources
| Brand | ON Semiconductor |
| ECAD Module |
|
| Mfr. Part Number | 55GN01CA-TB-E |
| Category | Semiconductors › Transistors › Transistors - Bipolar (BJT) - RF |
| Datasheet |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- 55GN01CA-TB-E Datasheet
- where to find 55GN01CA-TB-E
- ON Semiconductor
- ON Semiconductor 55GN01CA-TB-E
- 55GN01CA-TB-E PDF Datasheet
- 55GN01CA-TB-E Stock
- 55GN01CA-TB-E Pinout
- Datasheet 55GN01CA-TB-E
- 55GN01CA-TB-E Supplier
- ON Semiconductor Distributor
- 55GN01CA-TB-E Price
- 55GN01CA-TB-E Distributor
55GN01CA-TB-E Specifications
| Manufacturer | ON Semiconductor |
| Series | - |
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 10V |
| Frequency - Transition | 4.5GHz |
| Noise Figure (dB Typ @ f) | 1.9dB @ 1GHz |
| Gain | 9.5dB |
| Power - Max | 200mW |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 10mA, 5V |
| Current - Collector (Ic) (Max) | 70mA |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package | 3-CP |
The Products You May Be Interested In
|
Manufacturer Microsemi Corporation Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 60V Frequency - Transition 470MHz ~ 860MHz Noise Figure (dB Typ @ f) - Gain 8.5dB ~ 9.5dB Power - Max 290W DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 1A, 5V Current - Collector (Ic) (Max) 15A Operating Temperature 200°C (TJ) Mounting Type Chassis Mount Package / Case 55RT Supplier Device Package 55RT |
Manufacturer ON Semiconductor Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 25V Frequency - Transition 650MHz Noise Figure (dB Typ @ f) - Gain - Power - Max 350mW DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 4mA, 10V Current - Collector (Ic) (Max) 50mA Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package TO-92-3 |
Manufacturer CEL Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 5V Frequency - Transition 20GHz Noise Figure (dB Typ @ f) - Gain 12dB Power - Max 735mW DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 100mA, 3V Current - Collector (Ic) (Max) 500mA Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case SOT-343F Supplier Device Package - |
Manufacturer Toshiba Semiconductor and Storage Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 30V Frequency - Transition 550MHz Noise Figure (dB Typ @ f) 5dB @ 100MHz Gain 23dB Power - Max 100mW DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 1mA, 6V Current - Collector (Ic) (Max) 20mA Operating Temperature 125°C (TJ) Mounting Type Surface Mount Package / Case SC-70, SOT-323 Supplier Device Package USM |
Manufacturer NXP USA Inc. Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 15V Frequency - Transition 1GHz Noise Figure (dB Typ @ f) 4.5dB @ 500MHz Gain - Power - Max 300mW DC Current Gain (hFE) (Min) @ Ic, Vce 25 @ 2mA, 1V Current - Collector (Ic) (Max) 25mA Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case TO-236-3, SC-59, SOT-23-3 Supplier Device Package TO-236AB (SOT23) |
