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APT100GT60B2RG

APT100GT60B2RG

For Reference Only

Part Number APT100GT60B2RG
PNEDA Part # APT100GT60B2RG
Description IGBT 600V 148A 500W SOT247
Manufacturer Microsemi
Unit Price Request a Quote
In Stock 4,500
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 5 - Jun 10 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

APT100GT60B2RG Resources

Brand Microsemi
ECAD Module ECAD
Mfr. Part NumberAPT100GT60B2RG
CategorySemiconductorsTransistorsTransistors - IGBTs - Single

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APT100GT60B2RG Specifications

ManufacturerMicrosemi Corporation
SeriesThunderbolt IGBT®
IGBT TypeNPT
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)148A
Current - Collector Pulsed (Icm)300A
Vce(on) (Max) @ Vge, Ic2.5V @ 15V, 100A
Power - Max500W
Switching Energy3.25mJ (on), 3.125mJ (off)
Input TypeStandard
Gate Charge460nC
Td (on/off) @ 25°C40ns/320ns
Test Condition400V, 100A, 4.3Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3 Variant
Supplier Device Package-

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Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

75A

Current - Collector Pulsed (Icm)

200A

Vce(on) (Max) @ Vge, Ic

2.5V @ 15V, 50A

Power - Max

250W

Switching Energy

3.3mJ (off)

Input Type

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Gate Charge

167nC

Td (on/off) @ 25°C

70ns/150ns

Test Condition

480V, 50A, 2.7Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Package / Case

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Supplier Device Package

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Infineon Technologies

Manufacturer

Infineon Technologies

Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

55A

Current - Collector Pulsed (Icm)

60A

Vce(on) (Max) @ Vge, Ic

2.2V @ 15V, 20A

Power - Max

210W

Switching Energy

1.06mJ (on), 620µJ (off)

Input Type

Standard

Gate Charge

85nC

Td (on/off) @ 25°C

30ns/160ns

Test Condition

600V, 20A, 10Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247AC

IRG4BC30FDPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

31A

Current - Collector Pulsed (Icm)

124A

Vce(on) (Max) @ Vge, Ic

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Power - Max

100W

Switching Energy

630µJ (on), 1.39mJ (off)

Input Type

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Gate Charge

51nC

Td (on/off) @ 25°C

42ns/230ns

Test Condition

480V, 17A, 23Ohm, 15V

Reverse Recovery Time (trr)

42ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3

Supplier Device Package

TO-220AB

Manufacturer

IXYS

Series

XPT™, GenX3™

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

650V

Current - Collector (Ic) (Max)

150A

Current - Collector Pulsed (Icm)

360A

Vce(on) (Max) @ Vge, Ic

2.3V @ 15V, 60A

Power - Max

600W

Switching Energy

2mJ (on), 950µJ (off)

Input Type

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Gate Charge

122nC

Td (on/off) @ 25°C

26ns/93ns

Test Condition

400V, 60A, 3Ohm, 15V

Reverse Recovery Time (trr)

65ns

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Chassis Mount

Package / Case

SOT-227-4, miniBLOC

Supplier Device Package

SOT-227B

Manufacturer

IXYS

Series

HiPerFAST™

IGBT Type

PT

Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

70A

Current - Collector Pulsed (Icm)

140A

Vce(on) (Max) @ Vge, Ic

3.3V @ 15V, 35A

Power - Max

200W

Switching Energy

3.8mJ (off)

Input Type

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Gate Charge

170nC

Td (on/off) @ 25°C

50ns/180ns

Test Condition

960V, 35A, 4.7Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Package / Case

ISOPLUS247™

Supplier Device Package

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