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APT200GN60B2G

APT200GN60B2G

For Reference Only

Part Number APT200GN60B2G
PNEDA Part # APT200GN60B2G
Description IGBT 600V 283A 682W TO247
Manufacturer Microsemi
Unit Price Request a Quote
In Stock 6,336
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 31 - Jun 5 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

APT200GN60B2G Resources

Brand Microsemi
ECAD Module ECAD
Mfr. Part NumberAPT200GN60B2G
CategorySemiconductorsTransistorsTransistors - IGBTs - Single

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APT200GN60B2G Specifications

ManufacturerMicrosemi Corporation
Series-
IGBT TypeTrench Field Stop
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)283A
Current - Collector Pulsed (Icm)600A
Vce(on) (Max) @ Vge, Ic1.85V @ 15V, 200A
Power - Max682W
Switching Energy13mJ (on), 11mJ (off)
Input TypeStandard
Gate Charge1180nC
Td (on/off) @ 25°C50ns/560ns
Test Condition400V, 200A, 1Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device Package-

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Current - Collector (Ic) (Max)

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Td (on/off) @ 25°C

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Test Condition

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Gate Charge

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Td (on/off) @ 25°C

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Test Condition

400V, 50A, 8Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-40°C ~ 175°C (TJ)

Mounting Type

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Td (on/off) @ 25°C

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Supplier Device Package

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