Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

APT58M50J

APT58M50J

For Reference Only

Part Number APT58M50J
PNEDA Part # APT58M50J
Description MOSFET N-CH 500V 58A SOT-227
Manufacturer Microsemi
Unit Price Request a Quote
In Stock 6,246
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 15 - Jun 20 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

APT58M50J Resources

Brand Microsemi
ECAD Module ECAD
Mfr. Part NumberAPT58M50J
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • APT58M50J Datasheet
  • where to find APT58M50J
  • Microsemi

  • Microsemi APT58M50J
  • APT58M50J PDF Datasheet
  • APT58M50J Stock

  • APT58M50J Pinout
  • Datasheet APT58M50J
  • APT58M50J Supplier

  • Microsemi Distributor
  • APT58M50J Price
  • APT58M50J Distributor

APT58M50J Specifications

ManufacturerMicrosemi Corporation
SeriesPOWER MOS 8™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25°C58A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs65mOhm @ 42A, 10V
Vgs(th) (Max) @ Id5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs340nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds13500pF @ 25V
FET Feature-
Power Dissipation (Max)540W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeChassis Mount
Supplier Device PackageISOTOP®
Package / CaseSOT-227-4, miniBLOC

The Products You May Be Interested In

FQU10N20TU_AM002

ON Semiconductor

Manufacturer

ON Semiconductor

Series

QFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

7.6A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

360mOhm @ 3.8A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

18nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

670pF @ 25V

FET Feature

-

Power Dissipation (Max)

2.5W (Ta), 51W (Tc)

Operating Temperature

-

Mounting Type

Through Hole

Supplier Device Package

I-PAK

Package / Case

TO-251-3 Short Leads, IPak, TO-251AA

STN3NF06

STMicroelectronics

Manufacturer

STMicroelectronics

Series

STripFET™ II

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

4A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

100mOhm @ 1.5A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

13nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

315pF @ 25V

FET Feature

-

Power Dissipation (Max)

3.3W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-223

Package / Case

TO-261-4, TO-261AA

SI4442DY-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

15A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 10V

Rds On (Max) @ Id, Vgs

4.5mOhm @ 22A, 10V

Vgs(th) (Max) @ Id

1.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

50nC @ 4.5V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

1.6W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SO

Package / Case

8-SOIC (0.154", 3.90mm Width)

AUIRLS4030

Infineon Technologies

Manufacturer

Infineon Technologies

Series

Automotive, AEC-Q101, HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

180A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

4.3mOhm @ 110A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

130nC @ 4.5V

Vgs (Max)

±16V

Input Capacitance (Ciss) (Max) @ Vds

11360pF @ 50V

FET Feature

-

Power Dissipation (Max)

370W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

NTB23N03R

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

25V

Current - Continuous Drain (Id) @ 25°C

23A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

45mOhm @ 6A, 10V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

3.76nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

225pF @ 20V

FET Feature

-

Power Dissipation (Max)

37.5W (Tj)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Recently Sold

AMT102-V

AMT102-V

CUI

ROTARY ENCODER INCREMENT PROGPPR

VNQ600

VNQ600

STMicroelectronics

RELAY SSR 4-CH HI-SIDE 28-SOIC

MM3Z5V1ST1G

MM3Z5V1ST1G

ON Semiconductor

DIODE ZENER 5.1V 300MW SOD323

MIC2026-1YM-TR

MIC2026-1YM-TR

Microchip Technology

IC PW DIST SW DUAL 8SOIC

MT41K128M16JT-125 XIT:K

MT41K128M16JT-125 XIT:K

Micron Technology Inc.

IC DRAM 2G PARALLEL 96FBGA

MLX92251LSE-AAA-000-RE

MLX92251LSE-AAA-000-RE

Melexis Technologies NV

MAGNET SWITCH LATCH DUAL TSOT23

ZUS252405

ZUS252405

Cosel

DC DC CONVERTER 5V

STM32L433CCU6

STM32L433CCU6

STMicroelectronics

IC MCU 32BIT 256KB FLASH 48QFPN

MF-USMF020-2

MF-USMF020-2

Bourns

PTC RESET FUSE 30V 200MA 1210

ADM2484EBRWZ

ADM2484EBRWZ

Analog Devices

DGTL ISO 5KV RS422/RS485 16SOIC

3-1462039-1

3-1462039-1

TE Connectivity Potter & Brumfield Relays

RELAY TELECOM DPDT 2A 12VDC

RRH050P03TB1

RRH050P03TB1

Rohm Semiconductor

MOSFET P-CH 30V 5A SOP8