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APTM100A13DG

APTM100A13DG

For Reference Only

Part Number APTM100A13DG
PNEDA Part # APTM100A13DG
Description MOSFET 2N-CH 1000V 65A SP6
Manufacturer Microsemi
Unit Price Request a Quote
In Stock 5,058
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 12 - Jun 17 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

APTM100A13DG Resources

Brand Microsemi
ECAD Module ECAD
Mfr. Part NumberAPTM100A13DG
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays

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APTM100A13DG Specifications

ManufacturerMicrosemi Corporation
Series-
FET Type2 N-Channel (Half Bridge)
FET FeatureStandard
Drain to Source Voltage (Vdss)1000V (1kV)
Current - Continuous Drain (Id) @ 25°C65A
Rds On (Max) @ Id, Vgs156mOhm @ 32.5A, 10V
Vgs(th) (Max) @ Id5V @ 6mA
Gate Charge (Qg) (Max) @ Vgs562nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds15200pF @ 25V
Power - Max1250W
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeChassis Mount
Package / CaseSP6
Supplier Device PackageSP6

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