APTM100DSK35T3G
For Reference Only
| Part Number | APTM100DSK35T3G |
| PNEDA Part # | APTM100DSK35T3G |
| Description | MOSFET 2N-CH 1000V 22A SP3 |
| Manufacturer | Microsemi |
| Unit Price | Request a Quote |
| In Stock | 7,344 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 13 - Jun 18 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
APTM100DSK35T3G Resources
| Brand | Microsemi |
| ECAD Module |
|
| Mfr. Part Number | APTM100DSK35T3G |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Arrays |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- APTM100DSK35T3G Datasheet
- where to find APTM100DSK35T3G
- Microsemi
- Microsemi APTM100DSK35T3G
- APTM100DSK35T3G PDF Datasheet
- APTM100DSK35T3G Stock
- APTM100DSK35T3G Pinout
- Datasheet APTM100DSK35T3G
- APTM100DSK35T3G Supplier
- Microsemi Distributor
- APTM100DSK35T3G Price
- APTM100DSK35T3G Distributor
APTM100DSK35T3G Specifications
| Manufacturer | Microsemi Corporation |
| Series | - |
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Standard |
| Drain to Source Voltage (Vdss) | 1000V (1kV) |
| Current - Continuous Drain (Id) @ 25°C | 22A |
| Rds On (Max) @ Id, Vgs | 420mOhm @ 11A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 2.5mA |
| Gate Charge (Qg) (Max) @ Vgs | 186nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 5200pF @ 25V |
| Power - Max | 390W |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Chassis Mount |
| Package / Case | SP3 |
| Supplier Device Package | SP3 |
The Products You May Be Interested In
|
Manufacturer ON Semiconductor Series - FET Type 2 N-Channel (Dual) FET Feature Standard Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 540mA Rds On (Max) @ Id, Vgs 550mOhm @ 540mA, 4.5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 2.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds 150pF @ 16V Power - Max 250mW Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case SOT-563, SOT-666 Supplier Device Package SOT-563 |
Manufacturer Infineon Technologies Series HEXFET® FET Type 2 P-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 4.9A Rds On (Max) @ Id, Vgs 58mOhm @ 4.9A, 10V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 34nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 710pF @ 25V Power - Max 2W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 8-SOIC (0.154", 3.90mm Width) Supplier Device Package 8-SO |
Manufacturer Infineon Technologies Series HEXFET® FET Type 2 P-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 4.5A Rds On (Max) @ Id, Vgs 35mOhm @ 4.5A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 44nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 1464pF @ 25V Power - Max 1W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package 8-TSSOP |
Manufacturer Infineon Technologies Series Automotive, AEC-Q101, OptiMOS™ FET Type N and P-Channel Complementary FET Feature Logic Level Gate, 4.5V Drive Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 2.3A, 2A Rds On (Max) @ Id, Vgs 57mOhm @ 2.3A, 10V Vgs(th) (Max) @ Id 2V @ 11µA Gate Charge (Qg) (Max) @ Vgs 1.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 275pF @ 15V Power - Max 500mW Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case SOT-23-6 Thin, TSOT-23-6 Supplier Device Package PG-TSOP-6-6 |
Manufacturer Vishay Siliconix Series TrenchFET® FET Type 2 P-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 8V Current - Continuous Drain (Id) @ 25°C 4A Rds On (Max) @ Id, Vgs 70mOhm @ 3.3A, 4.5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 14nC @ 8V Input Capacitance (Ciss) (Max) @ Vds 420pF @ 4V Power - Max 3.1W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 8-SMD, Flat Lead Supplier Device Package 1206-8 ChipFET™ |
