APTM100H35FT3G
For Reference Only
Part Number | APTM100H35FT3G |
PNEDA Part # | APTM100H35FT3G |
Description | MOSFET 4N-CH 1000V 22A SP3 |
Manufacturer | Microsemi |
Unit Price | Request a Quote |
In Stock | 7,596 |
Warehouses | Shipped from Hong Kong SAR |
Estimated Delivery | Jun 12 - Jun 17 (Choose Expedited Shipping) |
Guarantee | Up to 1 year [PNEDA-Warranty]* |
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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APTM100H35FT3G Resources
Brand | Microsemi |
ECAD Module | |
Mfr. Part Number | APTM100H35FT3G |
Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Arrays |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
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Notes
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APTM100H35FT3G Specifications
Manufacturer | Microsemi Corporation |
Series | - |
FET Type | 4 N-Channel (H-Bridge) |
FET Feature | Standard |
Drain to Source Voltage (Vdss) | 1000V (1kV) |
Current - Continuous Drain (Id) @ 25°C | 22A |
Rds On (Max) @ Id, Vgs | 420mOhm @ 11A, 10V |
Vgs(th) (Max) @ Id | 5V @ 2.5mA |
Gate Charge (Qg) (Max) @ Vgs | 186nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 5200pF @ 25V |
Power - Max | 390W |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Chassis Mount |
Package / Case | SP3 |
Supplier Device Package | SP3 |
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