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APTM20DHM08G

APTM20DHM08G

For Reference Only

Part Number APTM20DHM08G
PNEDA Part # APTM20DHM08G
Description MOSFET 2N-CH 200V 208A SP6
Manufacturer Microsemi
Unit Price Request a Quote
In Stock 5,328
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 5 - Jun 10 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

APTM20DHM08G Resources

Brand Microsemi
ECAD Module ECAD
Mfr. Part NumberAPTM20DHM08G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays

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APTM20DHM08G Specifications

ManufacturerMicrosemi Corporation
Series-
FET Type2 N-Channel (Dual) Asymmetrical
FET FeatureStandard
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25°C208A
Rds On (Max) @ Id, Vgs10mOhm @ 104A, 10V
Vgs(th) (Max) @ Id5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs280nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds14400pF @ 25V
Power - Max781W
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeChassis Mount
Package / CaseSP6
Supplier Device PackageSP6

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Gate Charge (Qg) (Max) @ Vgs

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Input Capacitance (Ciss) (Max) @ Vds

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-55°C ~ 150°C (TJ)

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Vgs(th) (Max) @ Id

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Gate Charge (Qg) (Max) @ Vgs

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Input Capacitance (Ciss) (Max) @ Vds

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Power - Max

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Operating Temperature

150°C (TJ)

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Supplier Device Package

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FET Feature

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Drain to Source Voltage (Vdss)

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Current - Continuous Drain (Id) @ 25°C

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Rds On (Max) @ Id, Vgs

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Vgs(th) (Max) @ Id

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Gate Charge (Qg) (Max) @ Vgs

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Input Capacitance (Ciss) (Max) @ Vds

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Power - Max

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Supplier Device Package

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