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AUIRF9952Q

AUIRF9952Q

For Reference Only

Part Number AUIRF9952Q
PNEDA Part # AUIRF9952Q
Description MOSFET N/P-CH 30V 3.5A/2.3A 8SO
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 8,856
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 12 - Jun 17 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

AUIRF9952Q Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberAUIRF9952Q
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays

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AUIRF9952Q Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeN and P-Channel
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C3.5A, 2.3A
Rds On (Max) @ Id, Vgs100mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs14nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds190pF @ 15V
Power - Max2W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SO

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Drain to Source Voltage (Vdss)

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Gate Charge (Qg) (Max) @ Vgs

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Input Capacitance (Ciss) (Max) @ Vds

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Current - Continuous Drain (Id) @ 25°C

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Vgs(th) (Max) @ Id

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Gate Charge (Qg) (Max) @ Vgs

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Input Capacitance (Ciss) (Max) @ Vds

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Power - Max

2W

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Package / Case

8-SOIC (0.154", 3.90mm Width)

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FET Feature

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Current - Continuous Drain (Id) @ 25°C

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Rds On (Max) @ Id, Vgs

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Vgs(th) (Max) @ Id

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Gate Charge (Qg) (Max) @ Vgs

246nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

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Power - Max

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Operating Temperature

-40°C ~ 150°C (TJ)

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Current - Continuous Drain (Id) @ 25°C

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Rds On (Max) @ Id, Vgs

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Vgs(th) (Max) @ Id

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Gate Charge (Qg) (Max) @ Vgs

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Input Capacitance (Ciss) (Max) @ Vds

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