Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

BFL4001-1E

BFL4001-1E

For Reference Only

Part Number BFL4001-1E
PNEDA Part # BFL4001-1E
Description MOSFET N-CH 900V 4.1A
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 8,028
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 12 - Jun 17 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

BFL4001-1E Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberBFL4001-1E
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
BFL4001-1E, BFL4001-1E Datasheet (Total Pages: 7, Size: 250.93 KB)
PDFBFL4001-1EX Datasheet Cover
BFL4001-1EX Datasheet Page 2 BFL4001-1EX Datasheet Page 3 BFL4001-1EX Datasheet Page 4 BFL4001-1EX Datasheet Page 5 BFL4001-1EX Datasheet Page 6 BFL4001-1EX Datasheet Page 7

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • BFL4001-1E Datasheet
  • where to find BFL4001-1E
  • ON Semiconductor

  • ON Semiconductor BFL4001-1E
  • BFL4001-1E PDF Datasheet
  • BFL4001-1E Stock

  • BFL4001-1E Pinout
  • Datasheet BFL4001-1E
  • BFL4001-1E Supplier

  • ON Semiconductor Distributor
  • BFL4001-1E Price
  • BFL4001-1E Distributor

BFL4001-1E Specifications

ManufacturerON Semiconductor
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)900V
Current - Continuous Drain (Id) @ 25°C4.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs2.7Ohm @ 3.25A, 10V
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs44nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds850pF @ 30V
FET Feature-
Power Dissipation (Max)2W (Ta), 37W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220-3 Fullpack/TO-220F-3SG
Package / CaseTO-220-3 Full Pack

The Products You May Be Interested In

STP25N60M2-EP

STMicroelectronics

Manufacturer

STMicroelectronics

Series

MDmesh™ M2-EP

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

18A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

188mOhm @ 9A, 10V

Vgs(th) (Max) @ Id

4.75V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

29nC @ 10V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

1090pF @ 100V

FET Feature

-

Power Dissipation (Max)

150W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220

Package / Case

TO-220-3

AUIRL1404ZL

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

160A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

3.1mOhm @ 75A, 10V

Vgs(th) (Max) @ Id

2.7V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

110nC @ 5V

Vgs (Max)

±16V

Input Capacitance (Ciss) (Max) @ Vds

5080pF @ 25V

FET Feature

-

Power Dissipation (Max)

200W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-262

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA

IRFS4020TRLPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

18A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

105mOhm @ 11A, 10V

Vgs(th) (Max) @ Id

4.9V @ 100µA

Gate Charge (Qg) (Max) @ Vgs

29nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1200pF @ 50V

FET Feature

-

Power Dissipation (Max)

100W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

STB6N52K3

STMicroelectronics

Manufacturer

STMicroelectronics

Series

SuperMESH3™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

525V

Current - Continuous Drain (Id) @ 25°C

5A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.2Ohm @ 2.5A, 10V

Vgs(th) (Max) @ Id

4.5V @ 50µA

Gate Charge (Qg) (Max) @ Vgs

26nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

670pF @ 50V

FET Feature

-

Power Dissipation (Max)

70W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

IRFI9620GPBF

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

3A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.5Ohm @ 1.8A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

15nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

340pF @ 15V

FET Feature

-

Power Dissipation (Max)

30W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220-3

Package / Case

TO-220-3 Full Pack, Isolated Tab

Recently Sold

MCP4822-E/MS

MCP4822-E/MS

Microchip Technology

IC DAC 12BIT V-OUT 8MSOP

AT89S52-24AUR

AT89S52-24AUR

Microchip Technology

IC MCU 8BIT 8KB FLASH 44TQFP

MAX3645EEE+T

MAX3645EEE+T

Maxim Integrated

IC AMP LIMITING 16-QSOP

LT1118CST-2.5#TRPBF

LT1118CST-2.5#TRPBF

Linear Technology/Analog Devices

IC REG LIN 2.5V 800MA SOT223-3

1N4004GP-E3/54

1N4004GP-E3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 1A DO204AL

NTJD4001NT1G

NTJD4001NT1G

ON Semiconductor

MOSFET 2N-CH 30V 0.25A SOT-363

BR24T16F-WE2

BR24T16F-WE2

Rohm Semiconductor

IC EEPROM 16K I2C 400KHZ 8SOP

LIS35DE

LIS35DE

STMicroelectronics

ACCEL 2.3-9.2G I2C/SPI 14LGA

1SS355VMTE-17

1SS355VMTE-17

Rohm Semiconductor

DIODE GEN PURP 80V 100MA UMD2

HCPL-4200-500E

HCPL-4200-500E

Broadcom

OPTOISO 3.75KV RECEIVER 8DIP GW

1.5KE27AG

1.5KE27AG

Littelfuse

TVS DIODE 23.1V 37.5V AXIAL

TC1262-2.5VDB

TC1262-2.5VDB

Microchip Technology

IC REG LIN 2.5V 500MA SOT223-3