BFP196E6327HTSA1
For Reference Only
| Part Number | BFP196E6327HTSA1 |
| PNEDA Part # | BFP196E6327HTSA1 |
| Description | RF TRANS NPN 12V 7.5GHZ SOT143-4 |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 83,016 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 13 - Jun 18 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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BFP196E6327HTSA1 Resources
| Brand | Infineon Technologies |
| ECAD Module |
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| Mfr. Part Number | BFP196E6327HTSA1 |
| Category | Semiconductors › Transistors › Transistors - Bipolar (BJT) - RF |
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BFP196E6327HTSA1 Specifications
| Manufacturer | Infineon Technologies |
| Series | - |
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 12V |
| Frequency - Transition | 7.5GHz |
| Noise Figure (dB Typ @ f) | 1.3dB ~ 2.3dB @ 900MHz ~ 1.8GHz |
| Gain | 10.5dB ~ 16.5dB |
| Power - Max | 700mW |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 50mA, 8V |
| Current - Collector (Ic) (Max) | 150mA |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | TO-253-4, TO-253AA |
| Supplier Device Package | PG-SOT143-4 |
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Manufacturer Infineon Technologies Series - Transistor Type 2 NPN (Dual) Voltage - Collector Emitter Breakdown (Max) 12V Frequency - Transition 8GHz Noise Figure (dB Typ @ f) 0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz Gain 19dB Power - Max 450mW DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 15mA, 8V Current - Collector (Ic) (Max) 65mA Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case 6-VSSOP, SC-88, SOT-363 Supplier Device Package PG-SOT363-6 |
