BSB044N08NN3GXUMA1
For Reference Only
| Part Number | BSB044N08NN3GXUMA1 |
| PNEDA Part # | BSB044N08NN3GXUMA1 |
| Description | MOSFET N-CH 80V 18A WDSON-2 |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 7,002 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 4 - Jun 9 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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BSB044N08NN3GXUMA1 Resources
| Brand | Infineon Technologies |
| ECAD Module |
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| Mfr. Part Number | BSB044N08NN3GXUMA1 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
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BSB044N08NN3GXUMA1 Specifications
| Manufacturer | Infineon Technologies |
| Series | OptiMOS™ |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 80V |
| Current - Continuous Drain (Id) @ 25°C | 18A (Ta), 90A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 4.4mOhm @ 30A, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 97µA |
| Gate Charge (Qg) (Max) @ Vgs | 73nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 5700pF @ 40V |
| FET Feature | - |
| Power Dissipation (Max) | 2.2W (Ta), 78W (Tc) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | MG-WDSON-2, CanPAK M™ |
| Package / Case | 3-WDSON |
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Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 9.4A (Ta), 41A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 9mOhm @ 30A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 16.5nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 837pF @ 15V FET Feature - Power Dissipation (Max) 1.38W (Ta), 26.3W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package I-PAK Package / Case TO-251-3 Short Leads, IPak, TO-251AA |
Manufacturer Infineon Technologies Series HEXFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 6.3A (Ta) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V Rds On (Max) @ Id, Vgs 21mOhm @ 6.3A, 4.5V Vgs(th) (Max) @ Id 1.1V @ 10µA Gate Charge (Qg) (Max) @ Vgs 8.9nC @ 4.5V Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds 700pF @ 16V FET Feature - Power Dissipation (Max) 1.3W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package Micro3™/SOT-23 Package / Case TO-236-3, SC-59, SOT-23-3 |
Manufacturer Vishay Siliconix Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 250V Current - Continuous Drain (Id) @ 25°C 790mA (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 2Ohm @ 470mA, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 8.2nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 140pF @ 25V FET Feature - Power Dissipation (Max) 2W (Ta), 3.1W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-223 Package / Case TO-261-4, TO-261AA |
