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BSC077N12NS3GATMA1

BSC077N12NS3GATMA1

For Reference Only

Part Number BSC077N12NS3GATMA1
PNEDA Part # BSC077N12NS3GATMA1
Description MOSFET N-CH 120V 98A 8TDSON
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 5,274
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 4 - Jun 9 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

BSC077N12NS3GATMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberBSC077N12NS3GATMA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

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BSC077N12NS3GATMA1 Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)120V
Current - Continuous Drain (Id) @ 25°C13.4A (Ta), 98A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs7.7mOhm @ 50A, 10V
Vgs(th) (Max) @ Id4V @ 110µA
Gate Charge (Qg) (Max) @ Vgs88nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds5700pF @ 60V
FET Feature-
Power Dissipation (Max)139W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TDSON-8-1
Package / Case8-PowerTDFN

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