BSM75GB170DN2HOSA1
For Reference Only
| Part Number | BSM75GB170DN2HOSA1 |
| PNEDA Part # | BSM75GB170DN2HOSA1 |
| Description | IGBT 1700V 110A 625W MODULE |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 4,824 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 14 - Jun 19 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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BSM75GB170DN2HOSA1 Resources
| Brand | Infineon Technologies |
| ECAD Module |
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| Mfr. Part Number | BSM75GB170DN2HOSA1 |
| Category | Semiconductors › Transistors › Transistors - IGBTs - Modules |
| Datasheet |
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BSM75GB170DN2HOSA1 Specifications
| Manufacturer | Infineon Technologies |
| Series | - |
| IGBT Type | - |
| Configuration | Half Bridge |
| Voltage - Collector Emitter Breakdown (Max) | 1700V |
| Current - Collector (Ic) (Max) | 110A |
| Power - Max | 625W |
| Vce(on) (Max) @ Vge, Ic | 3.9V @ 15V, 75A |
| Current - Collector Cutoff (Max) | - |
| Input Capacitance (Cies) @ Vce | 11nF @ 25V |
| Input | Standard |
| NTC Thermistor | No |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Chassis Mount |
| Package / Case | Module |
| Supplier Device Package | Module |
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