Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

BSO201SPHXUMA1

BSO201SPHXUMA1

For Reference Only

Part Number BSO201SPHXUMA1
PNEDA Part # BSO201SPHXUMA1
Description MOSFET P-CH 20V 12A 8SOIC
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 26,616
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 20 - May 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

BSO201SPHXUMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberBSO201SPHXUMA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • BSO201SPHXUMA1 Datasheet
  • where to find BSO201SPHXUMA1
  • Infineon Technologies

  • Infineon Technologies BSO201SPHXUMA1
  • BSO201SPHXUMA1 PDF Datasheet
  • BSO201SPHXUMA1 Stock

  • BSO201SPHXUMA1 Pinout
  • Datasheet BSO201SPHXUMA1
  • BSO201SPHXUMA1 Supplier

  • Infineon Technologies Distributor
  • BSO201SPHXUMA1 Price
  • BSO201SPHXUMA1 Distributor

BSO201SPHXUMA1 Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C12A (Ta)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Rds On (Max) @ Id, Vgs8mOhm @ 14.9A, 4.5V
Vgs(th) (Max) @ Id1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs88nC @ 4.5V
Vgs (Max)±12V
Input Capacitance (Ciss) (Max) @ Vds9600pF @ 15V
FET Feature-
Power Dissipation (Max)1.6W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-DSO-8
Package / Case8-SOIC (0.154", 3.90mm Width)

The Products You May Be Interested In

IRFI614GPBF

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

250V

Current - Continuous Drain (Id) @ 25°C

2.1A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

2Ohm @ 1.3A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

8.2nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

140pF @ 25V

FET Feature

-

Power Dissipation (Max)

23W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220-3

Package / Case

TO-220-3 Full Pack, Isolated Tab

DMN24H3D6S-7

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

*

FET Type

-

Technology

-

Drain to Source Voltage (Vdss)

-

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

-

Supplier Device Package

-

Package / Case

-

FQPF14N15

ON Semiconductor

Manufacturer

ON Semiconductor

Series

QFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

150V

Current - Continuous Drain (Id) @ 25°C

9.8A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

210mOhm @ 4.9A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

23nC @ 10V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

715pF @ 25V

FET Feature

-

Power Dissipation (Max)

48W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220F

Package / Case

TO-220-3 Full Pack

GP1M005A050CH

Global Power Technologies Group

Manufacturer

Global Power Technologies Group

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

4.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.65Ohm @ 2.25A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

11nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

627pF @ 25V

FET Feature

-

Power Dissipation (Max)

92.5W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D-Pak

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Manufacturer

Nexperia USA Inc.

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

100A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

2.8mOhm @ 25A, 10V

Vgs(th) (Max) @ Id

1.95V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

39nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2435pF @ 15V

FET Feature

-

Power Dissipation (Max)

106W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

LFPAK56, Power-SO8

Package / Case

SC-100, SOT-669

Recently Sold

CY62187EV30LL-55BAXI

CY62187EV30LL-55BAXI

Cypress Semiconductor

IC SRAM 64M PARALLEL 48FBGA

AT24C1024BW-SH-T

AT24C1024BW-SH-T

Microchip Technology

IC EEPROM 1M I2C 1MHZ 8SOIC

VC060318A400RP

VC060318A400RP

VARISTOR 25.5V 30A 0603

JS28F128J3D75A

JS28F128J3D75A

Micron Technology Inc.

IC FLASH 128M PARALLEL 56TSOP

EPM7064STC44-10N

EPM7064STC44-10N

Intel

IC CPLD 64MC 10NS 44TQFP

MMA8451QR1

MMA8451QR1

NXP

ACCELEROMETER 2-8G I2C 16QFN

MC68HC908JB8ADW

MC68HC908JB8ADW

NXP

IC MCU 8BIT 8KB FLASH 28SOIC

LTC4417IUF#TRPBF

LTC4417IUF#TRPBF

Linear Technology/Analog Devices

IC OR CTRLR SRC SELECT 24QFN

AD623ARZ

AD623ARZ

Analog Devices

IC INST AMP 1 CIRCUIT 8SOIC

ACPL-M43T-500E

ACPL-M43T-500E

Broadcom

OPTOISOLATOR 4KV TRANSISTOR 5-SO

MBRD1035CTLG

MBRD1035CTLG

ON Semiconductor

DIODE ARRAY SCHOTTKY 35V 5A DPAK

PDS1040-13

PDS1040-13

Diodes Incorporated

DIODE SCHOTTKY 40V 10A POWERDI5