BUK7Y2R0-40HX
For Reference Only
| Part Number | BUK7Y2R0-40HX |
| PNEDA Part # | BUK7Y2R0-40HX |
| Description | MOSFET N-CH 40V 120A LFPAK56 |
| Manufacturer | Nexperia |
| Unit Price | Request a Quote |
| In Stock | 3,348 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 19 - May 24 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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BUK7Y2R0-40HX Resources
| Brand | Nexperia |
| ECAD Module |
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| Mfr. Part Number | BUK7Y2R0-40HX |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
| Datasheet |
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BUK7Y2R0-40HX Specifications
| Manufacturer | Nexperia USA Inc. |
| Series | Automotive, AEC-Q101 |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25°C | 120A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 2mOhm @ 25A, 10V |
| Vgs(th) (Max) @ Id | 3.6V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 90.5nC @ 10V |
| Vgs (Max) | +20V, -10V |
| Input Capacitance (Ciss) (Max) @ Vds | 5450pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 217W (Ta) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | LFPAK56, Power-SO8 |
| Package / Case | SC-100, SOT-669 |
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Manufacturer Infineon Technologies Series OptiMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 75V Current - Continuous Drain (Id) @ 25°C 2.3A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 160mOhm @ 2.3A, 10V Vgs(th) (Max) @ Id 1.8V @ 218µA Gate Charge (Qg) (Max) @ Vgs 13.1nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 315pF @ 25V FET Feature - Power Dissipation (Max) 1.8W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-SOT223-4 Package / Case TO-261-4, TO-261AA |
Manufacturer Nexperia USA Inc. Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 30A (Tc) Drive Voltage (Max Rds On, Min Rds On) 5V, 10V Rds On (Max) @ Id, Vgs 37.5mOhm @ 5A, 10V Vgs(th) (Max) @ Id 2.1V @ 1mA Gate Charge (Qg) (Max) @ Vgs 39.2nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1905pF @ 25V FET Feature - Power Dissipation (Max) 94.9W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package LFPAK56, Power-SO8 Package / Case SC-100, SOT-669 |
Manufacturer Microsemi Corporation Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 1200V Current - Continuous Drain (Id) @ 25°C 4A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 4.6Ohm @ 2A, 10V Vgs(th) (Max) @ Id 5V @ 500µA Gate Charge (Qg) (Max) @ Vgs 43nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 1385pF @ 25V FET Feature - Power Dissipation (Max) 225W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220 Package / Case TO-220-3 |
