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BUK962R1-40E,118

BUK962R1-40E,118

For Reference Only

Part Number BUK962R1-40E,118
PNEDA Part # BUK962R1-40E-118
Description MOSFET N-CH 40V 120A D2PAK
Manufacturer NXP
Unit Price Request a Quote
In Stock 6,300
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 15 - Jun 20 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

BUK962R1-40E Resources

Brand NXP
ECAD Module ECAD
Mfr. Part NumberBUK962R1-40E,118
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
BUK962R1-40E, BUK962R1-40E Datasheet (Total Pages: 14, Size: 329.11 KB)
PDFBUK962R1-40E Datasheet Cover
BUK962R1-40E Datasheet Page 2 BUK962R1-40E Datasheet Page 3 BUK962R1-40E Datasheet Page 4 BUK962R1-40E Datasheet Page 5 BUK962R1-40E Datasheet Page 6 BUK962R1-40E Datasheet Page 7 BUK962R1-40E Datasheet Page 8 BUK962R1-40E Datasheet Page 9 BUK962R1-40E Datasheet Page 10 BUK962R1-40E Datasheet Page 11

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BUK962R1-40E Specifications

ManufacturerNXP USA Inc.
SeriesTrenchMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)5V, 10V
Rds On (Max) @ Id, Vgs1.8mOhm @ 25A, 10V
Vgs(th) (Max) @ Id2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs87.8nC @ 5V
Vgs (Max)±10V
Input Capacitance (Ciss) (Max) @ Vds13160pF @ 25V
FET Feature-
Power Dissipation (Max)293W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD2PAK
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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