C3M0120090D
For Reference Only
| Part Number | C3M0120090D |
| PNEDA Part # | C3M0120090D |
| Description | 900V, 120 MOHM, G3 SIC MOSFET |
| Manufacturer | Cree/Wolfspeed |
| Unit Price | Request a Quote |
| In Stock | 23,154 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 14 - Jun 19 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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C3M0120090D Resources
| Brand | Cree/Wolfspeed |
| ECAD Module |
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| Mfr. Part Number | C3M0120090D |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
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Notes
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C3M0120090D Specifications
| Manufacturer | Cree/Wolfspeed |
| Series | C3M™ |
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 900V |
| Current - Continuous Drain (Id) @ 25°C | 23A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 15V |
| Rds On (Max) @ Id, Vgs | 155mOhm @ 15A, 15V |
| Vgs(th) (Max) @ Id | 3.5V @ 3mA |
| Gate Charge (Qg) (Max) @ Vgs | 17.3nC @ 15V |
| Vgs (Max) | +18V, -8V |
| Input Capacitance (Ciss) (Max) @ Vds | 350pF @ 600V |
| FET Feature | - |
| Power Dissipation (Max) | 97W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247-3 |
| Package / Case | TO-247-3 |
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