CDBDSC10650-G
For Reference Only
| Part Number | CDBDSC10650-G |
| PNEDA Part # | CDBDSC10650-G |
| Description | DIODE SILICON CARBIDE POWER SCHO |
| Manufacturer | Comchip Technology |
| Unit Price | Request a Quote |
| In Stock | 7,488 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 1 - May 6 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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CDBDSC10650-G Resources
| Brand | Comchip Technology |
| ECAD Module |
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| Mfr. Part Number | CDBDSC10650-G |
| Category | Semiconductors › Diodes & Rectifiers › Rectifiers - Single |
Payment Method
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- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
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- Orders cannot be canceled after shipping the packages.
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CDBDSC10650-G Specifications
| Manufacturer | Comchip Technology |
| Series | - |
| Diode Type | Silicon Carbide Schottky |
| Voltage - DC Reverse (Vr) (Max) | 650V |
| Current - Average Rectified (Io) | 33A (DC) |
| Voltage - Forward (Vf) (Max) @ If | 1.7V @ 10A |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0ns |
| Current - Reverse Leakage @ Vr | 100µA @ 650V |
| Capacitance @ Vr, F | 690pF @ 0V, 1MHz |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package | D-PAK (TO-252) |
| Operating Temperature - Junction | -55°C ~ 175°C |
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Manufacturer Vishay Semiconductor Diodes Division Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 50V Current - Average Rectified (Io) 1A Voltage - Forward (Vf) (Max) @ If 1.1V @ 1A Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 5µA @ 50V Capacitance @ Vr, F 15pF @ 4V, 1MHz Mounting Type Through Hole Package / Case DO-204AL, DO-41, Axial Supplier Device Package DO-204AL (DO-41) Operating Temperature - Junction -50°C ~ 150°C |
Manufacturer Vishay Semiconductor Diodes Division Series - Diode Type Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max) 1600V Current - Average Rectified (Io) 70A Voltage - Forward (Vf) (Max) @ If 1.46V @ 220A Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 4.5mA @ 1600V Capacitance @ Vr, F - Mounting Type Chassis, Stud Mount Package / Case DO-203AB, DO-5, Stud Supplier Device Package DO-203AB Operating Temperature - Junction -65°C ~ 150°C |
Manufacturer ON Semiconductor Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 80V Current - Average Rectified (Io) 200mA Voltage - Forward (Vf) (Max) @ If 1V @ 100mA Speed Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 25nA @ 60V Capacitance @ Vr, F - Mounting Type Through Hole Package / Case DO-204AH, DO-35, Axial Supplier Device Package DO-35 Operating Temperature - Junction 175°C (Max) |
Manufacturer Vishay Semiconductor Diodes Division Series eSMP® Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 30V Current - Average Rectified (Io) 12A Voltage - Forward (Vf) (Max) @ If 600mV @ 12A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 800µA @ 40V Capacitance @ Vr, F 750pF @ 4V, 1MHz Mounting Type Surface Mount Package / Case TO-277, 3-PowerDFN Supplier Device Package TO-277A (SMPC) Operating Temperature - Junction -55°C ~ 150°C |
