Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

DMN10H100SK3-13

DMN10H100SK3-13

For Reference Only

Part Number DMN10H100SK3-13
PNEDA Part # DMN10H100SK3-13
Description MOSFET N-CH 100V 18A TO252
Manufacturer Diodes Incorporated
Unit Price Request a Quote
In Stock 6,930
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 18 - May 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

DMN10H100SK3-13 Resources

Brand Diodes Incorporated
ECAD Module ECAD
Mfr. Part NumberDMN10H100SK3-13
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
DMN10H100SK3-13, DMN10H100SK3-13 Datasheet (Total Pages: 7, Size: 536.13 KB)
PDFDMN10H100SK3-13 Datasheet Cover
DMN10H100SK3-13 Datasheet Page 2 DMN10H100SK3-13 Datasheet Page 3 DMN10H100SK3-13 Datasheet Page 4 DMN10H100SK3-13 Datasheet Page 5 DMN10H100SK3-13 Datasheet Page 6 DMN10H100SK3-13 Datasheet Page 7

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • DMN10H100SK3-13 Datasheet
  • where to find DMN10H100SK3-13
  • Diodes Incorporated

  • Diodes Incorporated DMN10H100SK3-13
  • DMN10H100SK3-13 PDF Datasheet
  • DMN10H100SK3-13 Stock

  • DMN10H100SK3-13 Pinout
  • Datasheet DMN10H100SK3-13
  • DMN10H100SK3-13 Supplier

  • Diodes Incorporated Distributor
  • DMN10H100SK3-13 Price
  • DMN10H100SK3-13 Distributor

DMN10H100SK3-13 Specifications

ManufacturerDiodes Incorporated
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C18A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs80mOhm @ 3.3A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs25.2nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1172pF @ 50V
FET Feature-
Power Dissipation (Max)37W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-252
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

The Products You May Be Interested In

MSC280SMA120B

Microsemi

Manufacturer

Microsemi Corporation

Series

-

FET Type

N-Channel

Technology

SiC (Silicon Carbide Junction Transistor)

Drain to Source Voltage (Vdss)

1.2kV

Current - Continuous Drain (Id) @ 25°C

9.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

20V

Rds On (Max) @ Id, Vgs

350mOhm @ 5A, 20V

Vgs(th) (Max) @ Id

2.8V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

20nC @ 20V

Vgs (Max)

+25V, -10V

Input Capacitance (Ciss) (Max) @ Vds

300pF @ 1000V

FET Feature

-

Power Dissipation (Max)

55W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247-3

Package / Case

TO-247-3

DMTH32M5LPS-13

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

170A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

2.2mOhm @ 30A, 10V

Vgs(th) (Max) @ Id

3V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

68nC @ 10V

Vgs (Max)

±16V

Input Capacitance (Ciss) (Max) @ Vds

3944pF @ 25V

FET Feature

-

Power Dissipation (Max)

3.2W (Ta), 100W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerDI5060-8

Package / Case

8-PowerTDFN

DMP2069UFY4-7

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

2.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

54mOhm @ 2.5A, 4.5V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

9.1nC @ 4.5V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

214pF @ 10V

FET Feature

-

Power Dissipation (Max)

530mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

DFN2015H4-3

Package / Case

3-XFDFN

RJ1G08CGNTLL

Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

80A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

5.6mOhm @ 80A, 10V

Vgs(th) (Max) @ Id

2.5V @ 500µA

Gate Charge (Qg) (Max) @ Vgs

31.1nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2410pF @ 20V

FET Feature

-

Power Dissipation (Max)

78W (Ta)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

LPTL

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

IRF3710ZPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

59A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

18mOhm @ 35A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

120nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2900pF @ 25V

FET Feature

-

Power Dissipation (Max)

160W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

Recently Sold

FPF2125

FPF2125

ON Semiconductor

IC LOAD SWITCH ADVANCED SOT23

ISL6262CRZ

ISL6262CRZ

Renesas Electronics America Inc.

IC REG CONV INTEL 1OUT 48QFN

ESDALC5-1BM2

ESDALC5-1BM2

STMicroelectronics

TVS DIODE 5V SOD882

IHLM2525CZER100M01

IHLM2525CZER100M01

Vishay Dale

FIXED IND 10UH 3A 105 MOHM SMD

74HC32D,652

74HC32D,652

Nexperia

IC GATE OR 4CH 2-INP 14SO

16SVPF180M

16SVPF180M

Panasonic Electronic Components

CAP ALUM POLY 180UF 20% 16V SMD

SM05T1G

SM05T1G

ON Semiconductor

TVS DIODE 5V 9.8V SOT23-3

J111

J111

ON Semiconductor

JFET N-CH 35V 625MW TO92

ADP7158ACPZ-3.3-R7

ADP7158ACPZ-3.3-R7

Analog Devices

IC REG LINEAR 3.3V 2A 10LFCSP

MAX3087EESA+

MAX3087EESA+

Maxim Integrated

IC TRANSCEIVER FULL 1/1 8SOIC

PIC16F18323-I/SL

PIC16F18323-I/SL

Microchip Technology

IC MCU 8BIT 3.5KB FLASH 14SOIC

MMPF0100F0AEP

MMPF0100F0AEP

NXP

IC REG CONV I.MX6 12OUT 56HVQFN