Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

DMN10H170SK3Q-13

DMN10H170SK3Q-13

For Reference Only

Part Number DMN10H170SK3Q-13
PNEDA Part # DMN10H170SK3Q-13
Description MOSFET N-CHAN 61V 100V TO252
Manufacturer Diodes Incorporated
Unit Price Request a Quote
In Stock 5,688
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 5 - Jun 10 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

DMN10H170SK3Q-13 Resources

Brand Diodes Incorporated
ECAD Module ECAD
Mfr. Part NumberDMN10H170SK3Q-13
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
DMN10H170SK3Q-13, DMN10H170SK3Q-13 Datasheet (Total Pages: 6, Size: 222.85 KB)
PDFDMN10H170SK3Q-13 Datasheet Cover
DMN10H170SK3Q-13 Datasheet Page 2 DMN10H170SK3Q-13 Datasheet Page 3 DMN10H170SK3Q-13 Datasheet Page 4 DMN10H170SK3Q-13 Datasheet Page 5 DMN10H170SK3Q-13 Datasheet Page 6

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • DMN10H170SK3Q-13 Datasheet
  • where to find DMN10H170SK3Q-13
  • Diodes Incorporated

  • Diodes Incorporated DMN10H170SK3Q-13
  • DMN10H170SK3Q-13 PDF Datasheet
  • DMN10H170SK3Q-13 Stock

  • DMN10H170SK3Q-13 Pinout
  • Datasheet DMN10H170SK3Q-13
  • DMN10H170SK3Q-13 Supplier

  • Diodes Incorporated Distributor
  • DMN10H170SK3Q-13 Price
  • DMN10H170SK3Q-13 Distributor

DMN10H170SK3Q-13 Specifications

ManufacturerDiodes Incorporated
SeriesAutomotive, AEC-Q101
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs140mOhm @ 5A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs9.7nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1167pF @ 25V
FET Feature-
Power Dissipation (Max)42W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-252
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

The Products You May Be Interested In

RSD131P10TL

Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

13A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4V, 10V

Rds On (Max) @ Id, Vgs

200mOhm @ 6.5A, 10V

Vgs(th) (Max) @ Id

2.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

40nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2400pF @ 25V

FET Feature

-

Power Dissipation (Max)

850mW (Ta), 20W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

CPT3

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

IRFU9024

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

8.8A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

280mOhm @ 5.3A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

19nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

570pF @ 25V

FET Feature

-

Power Dissipation (Max)

2.5W (Ta), 42W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-251AA

Package / Case

TO-251-3 Short Leads, IPak, TO-251AA

NTRV4101PT1G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

1.8A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

85mOhm @ 1.6A, 4.5V

Vgs(th) (Max) @ Id

1.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

8.5nC @ 4.5V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

675pF @ 10V

FET Feature

-

Power Dissipation (Max)

420mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-23-3 (TO-236)

Package / Case

TO-236-3, SC-59, SOT-23-3

MCH3484-TL-H

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

4.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

0.9V, 2.5V

Rds On (Max) @ Id, Vgs

40mOhm @ 2A, 2.5V

Vgs(th) (Max) @ Id

800mV @ 1mA

Gate Charge (Qg) (Max) @ Vgs

11nC @ 2.5V

Vgs (Max)

±5V

Input Capacitance (Ciss) (Max) @ Vds

630pF @ 10V

FET Feature

-

Power Dissipation (Max)

1W (Ta)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SC-70FL/MCPH3

Package / Case

3-SMD, Flat Leads

IXFR48N60P

IXYS

Manufacturer

IXYS

Series

HiPerFET™, PolarHT™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

32A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

150mOhm @ 24A, 10V

Vgs(th) (Max) @ Id

5V @ 8mA

Gate Charge (Qg) (Max) @ Vgs

150nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

8860pF @ 25V

FET Feature

-

Power Dissipation (Max)

300W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

ISOPLUS247™

Package / Case

ISOPLUS247™

Recently Sold

STBB1-APUR

STBB1-APUR

STMicroelectronics

IC REG BCK BST ADJ 1.6A 10DFN

M25P64-VMF6P

M25P64-VMF6P

Micron Technology Inc.

IC FLASH 64M SPI 50MHZ 16SO W

TPSC107M016R0200

TPSC107M016R0200

CAP TANT 100UF 20% 16V 2312

PA0277NLT

PA0277NLT

Pulse Electronics Power

FIXED IND 700NH 10.7A 95 MOHM

MAX3232CSE+T

MAX3232CSE+T

Maxim Integrated

IC TRANSCEIVER FULL 2/2 16SO

MPC9448ACR2

MPC9448ACR2

IDT, Integrated Device Technology

IC CLK BUFFER 1:12 350MHZ 32TQFP

SMAJ30CA

SMAJ30CA

Bourns

TVS DIODE 30V 48.4V SMA

LTC6363IMS8#PBF

LTC6363IMS8#PBF

Linear Technology/Analog Devices

IC OPAMP DIFF 1 CIRCUIT 8MSOP

MC68HC908GP32CFB

MC68HC908GP32CFB

NXP

IC MCU 8BIT 32KB FLASH 44QFP

ZXMN3A01FTA

ZXMN3A01FTA

Diodes Incorporated

MOSFET N-CH 30V 1.8A SOT23-3

TS27L2CDT

TS27L2CDT

STMicroelectronics

IC OPAMP GP 2 CIRCUIT 8SO

CRM2512-JW-103ELF

CRM2512-JW-103ELF

Bourns

RES SMD 10K OHM 5% 2W 2512