Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

DN2540N3-G

DN2540N3-G

For Reference Only

Part Number DN2540N3-G
PNEDA Part # DN2540N3-G
Description MOSFET N-CH 400V 0.12A TO92-3
Manufacturer Microchip Technology
Unit Price Request a Quote
In Stock 13,398
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 22 - May 27 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

DN2540N3-G Resources

Brand Microchip Technology
ECAD Module ECAD
Mfr. Part NumberDN2540N3-G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • DN2540N3-G Datasheet
  • where to find DN2540N3-G
  • Microchip Technology

  • Microchip Technology DN2540N3-G
  • DN2540N3-G PDF Datasheet
  • DN2540N3-G Stock

  • DN2540N3-G Pinout
  • Datasheet DN2540N3-G
  • DN2540N3-G Supplier

  • Microchip Technology Distributor
  • DN2540N3-G Price
  • DN2540N3-G Distributor

DN2540N3-G Specifications

ManufacturerMicrochip Technology
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)400V
Current - Continuous Drain (Id) @ 25°C120mA (Tj)
Drive Voltage (Max Rds On, Min Rds On)0V
Rds On (Max) @ Id, Vgs25Ohm @ 120mA, 0V
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds300pF @ 25V
FET FeatureDepletion Mode
Power Dissipation (Max)1W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-92 (TO-226)
Package / CaseTO-226-3, TO-92-3 (TO-226AA)

The Products You May Be Interested In

NVTFS4C08NWFTWG

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

17A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

5.9mOhm @ 30A, 10V

Vgs(th) (Max) @ Id

2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

18.2nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1113pF @ 15V

FET Feature

-

Power Dissipation (Max)

3.1W (Ta), 31W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-WDFN (3.3x3.3)

Package / Case

8-PowerWDFN

STF26NM60N

STMicroelectronics

Manufacturer

STMicroelectronics

Series

MDmesh™ II

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

20A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

165mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

60nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1800pF @ 50V

FET Feature

-

Power Dissipation (Max)

35W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220FP

Package / Case

TO-220-3 Full Pack

FDZ7064AS

ON Semiconductor

Manufacturer

ON Semiconductor

Series

PowerTrench®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

13.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

5.6mOhm @ 13.5A, 10V

Vgs(th) (Max) @ Id

3V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

51nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1960pF @ 15V

FET Feature

-

Power Dissipation (Max)

2.2W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

30-BGA (4x3.5)

Package / Case

30-WFBGA

IRF530STRL

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

14A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

160mOhm @ 8.4A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

26nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

670pF @ 25V

FET Feature

-

Power Dissipation (Max)

3.7W (Ta), 88W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

AOI514

Alpha & Omega Semiconductor

Manufacturer

Alpha & Omega Semiconductor Inc.

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

17A (Ta), 46A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

5.9mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

2.4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

18nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1187pF @ 15V

FET Feature

-

Power Dissipation (Max)

2.5W (Ta), 50W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-251A

Package / Case

TO-251-3 Stub Leads, IPak

Recently Sold

HA7-5147-2

HA7-5147-2

Renesas Electronics America Inc.

IC OPAMP GP 1 CIRCUIT 8CERDIP

LT3437IFE#PBF

LT3437IFE#PBF

Linear Technology/Analog Devices

IC REG BUCK ADJ 500MA 16TSSOP

BLM18PG121SN1D

BLM18PG121SN1D

Murata

FERRITE BEAD 120 OHM 0603 1LN

REF195GSZ

REF195GSZ

Analog Devices

IC VREF SERIES 5V 8SOIC

MMSZ4700T1G

MMSZ4700T1G

ON Semiconductor

DIODE ZENER 13V 500MW SOD123

SSM2166SZ

SSM2166SZ

Analog Devices

IC PREAMP AUDIO MONO MIC 14SOIC

ISL8206MIRZ

ISL8206MIRZ

Renesas Electronics America Inc.

DC DC CONVERTER 0.6-6V 6A

ADM3202ARN

ADM3202ARN

Analog Devices

IC TRANSCEIVER FULL 2/2 16SOIC

TLP227G-2(TP1,N,F)

TLP227G-2(TP1,N,F)

Toshiba Semiconductor and Storage

SSR RELAY SPST-NO 120MA 0-350V

MAX6817EUT+T

MAX6817EUT+T

Maxim Integrated

IC DEBOUNCER SWITCH DUAL SOT23-6

NJM2121M

NJM2121M

NJR Corporation/NJRC

IC OPAMP GP 2 CIRCUIT 8DMP

CPH3225A

CPH3225A

Seiko Instruments

CAP 11MF 3.3V SURFACE MOUNT