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EMB10T2R

EMB10T2R

For Reference Only

Part Number EMB10T2R
PNEDA Part # EMB10T2R
Description TRANS 2PNP PREBIAS 0.15W EMT6
Manufacturer Rohm Semiconductor
Unit Price Request a Quote
In Stock 5,166
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 5 - Jun 10 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

EMB10T2R Resources

Brand Rohm Semiconductor
ECAD Module ECAD
Mfr. Part NumberEMB10T2R
CategorySemiconductorsTransistorsTransistors - Bipolar (BJT) - Arrays, Pre-Biased
Datasheet
EMB10T2R, EMB10T2R Datasheet (Total Pages: 10, Size: 1,661.99 KB)
PDFEMB10T2R Datasheet Cover
EMB10T2R Datasheet Page 2 EMB10T2R Datasheet Page 3 EMB10T2R Datasheet Page 4 EMB10T2R Datasheet Page 5 EMB10T2R Datasheet Page 6 EMB10T2R Datasheet Page 7 EMB10T2R Datasheet Page 8 EMB10T2R Datasheet Page 9 EMB10T2R Datasheet Page 10

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EMB10T2R Specifications

ManufacturerRohm Semiconductor
Series-
Transistor Type2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1)2.2kOhms
Resistor - Emitter Base (R2)47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic300mV @ 250µA, 5mA
Current - Collector Cutoff (Max)500nA
Frequency - Transition250MHz
Power - Max150mW
Mounting TypeSurface Mount
Package / CaseSOT-563, SOT-666
Supplier Device PackageEMT6

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Series

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Transistor Type

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Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

10kOhms

Resistor - Emitter Base (R2)

10kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

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Vce Saturation (Max) @ Ib, Ic

300mV @ 500µA, 10mA

Current - Collector Cutoff (Max)

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Frequency - Transition

250MHz

Power - Max

150mW

Mounting Type

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Package / Case

SOT-563, SOT-666

Supplier Device Package

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Series

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Current - Collector (Ic) (Max)

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Voltage - Collector Emitter Breakdown (Max)

50V, 60V

Resistor - Base (R1)

4.7kOhms

Resistor - Emitter Base (R2)

4.7kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

30 @ 20mA, 5V / 150 @ 500mA, 5V

Vce Saturation (Max) @ Ib, Ic

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Current - Collector Cutoff (Max)

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Frequency - Transition

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Power - Max

600mW

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Package / Case

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Rohm Semiconductor

Manufacturer

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Series

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Transistor Type

2 PNP - Pre-Biased (Dual)

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

47kOhms

Resistor - Emitter Base (R2)

47kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

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Vce Saturation (Max) @ Ib, Ic

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Current - Collector Cutoff (Max)

500nA

Frequency - Transition

250MHz

Power - Max

150mW

Mounting Type

Surface Mount

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5-TSSOP, SC-70-5, SOT-353

Supplier Device Package

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Rohm Semiconductor

Manufacturer

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Series

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Transistor Type

2 PNP - Pre-Biased (Dual)

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

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Resistor - Base (R1)

10kOhms

Resistor - Emitter Base (R2)

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DC Current Gain (hFE) (Min) @ Ic, Vce

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Vce Saturation (Max) @ Ib, Ic

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Current - Collector Cutoff (Max)

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Frequency - Transition

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Power - Max

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Supplier Device Package

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Diodes Incorporated

Manufacturer

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Series

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Transistor Type

2 NPN - Pre-Biased (Dual)

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

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Resistor - Emitter Base (R2)

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DC Current Gain (hFE) (Min) @ Ic, Vce

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Vce Saturation (Max) @ Ib, Ic

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Current - Collector Cutoff (Max)

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Frequency - Transition

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Power - Max

150mW

Mounting Type

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Package / Case

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Supplier Device Package

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