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EPC2016C

EPC2016C

For Reference Only

Part Number EPC2016C
PNEDA Part # EPC2016C
Description GANFET TRANS 100V 18A BUMPED DIE
Manufacturer EPC
Unit Price Request a Quote
In Stock 2,281,512
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 12 - May 17 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

EPC2016C Resources

Brand EPC
ECAD Module ECAD
Mfr. Part NumberEPC2016C
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
EPC2016C, EPC2016C Datasheet (Total Pages: 6, Size: 980.67 KB)
PDFEPC2016C Datasheet Cover
EPC2016C Datasheet Page 2 EPC2016C Datasheet Page 3 EPC2016C Datasheet Page 4 EPC2016C Datasheet Page 5 EPC2016C Datasheet Page 6

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EPC2016C Specifications

ManufacturerEPC
SerieseGaN®
FET TypeN-Channel
TechnologyGaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C18A (Ta)
Drive Voltage (Max Rds On, Min Rds On)5V
Rds On (Max) @ Id, Vgs16mOhm @ 11A, 5V
Vgs(th) (Max) @ Id2.5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs4.5nC @ 5V
Vgs (Max)+6V, -4V
Input Capacitance (Ciss) (Max) @ Vds420pF @ 50V
FET Feature-
Power Dissipation (Max)-
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageDie
Package / CaseDie

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