F1T6GHA0G
For Reference Only
| Part Number | F1T6GHA0G |
| PNEDA Part # | F1T6GHA0G |
| Description | DIODE GEN PURP 800V 1A TS-1 |
| Manufacturer | Taiwan Semiconductor Corporation |
| Unit Price | Request a Quote |
| In Stock | 5,202 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 4 - Jun 9 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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F1T6GHA0G Resources
| Brand | Taiwan Semiconductor Corporation |
| ECAD Module |
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| Mfr. Part Number | F1T6GHA0G |
| Category | Semiconductors › Diodes & Rectifiers › Rectifiers - Single |
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- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
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Notes
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F1T6GHA0G Specifications
| Manufacturer | Taiwan Semiconductor Corporation |
| Series | Automotive, AEC-Q101 |
| Diode Type | Standard |
| Voltage - DC Reverse (Vr) (Max) | 800V |
| Current - Average Rectified (Io) | 1A |
| Voltage - Forward (Vf) (Max) @ If | 1.3V @ 1A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 500ns |
| Current - Reverse Leakage @ Vr | 5µA @ 800V |
| Capacitance @ Vr, F | 15pF @ 4V, 1MHz |
| Mounting Type | Through Hole |
| Package / Case | T-18, Axial |
| Supplier Device Package | TS-1 |
| Operating Temperature - Junction | -55°C ~ 150°C |
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Manufacturer Infineon Technologies Series - Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 4V Current - Average Rectified (Io) 110mA (DC) Voltage - Forward (Vf) (Max) @ If 410mV @ 10mA Speed Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 5µA @ 1V Capacitance @ Vr, F 350pF @ 0V, 1MHz Mounting Type Surface Mount Package / Case 0201 (0603 Metric) Supplier Device Package PG-TSSLP-2-3 Operating Temperature - Junction -55°C ~ 150°C |
Manufacturer GeneSiC Semiconductor Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 400V Current - Average Rectified (Io) 60A Voltage - Forward (Vf) (Max) @ If 1.1V @ 60A Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 10µA @ 50V Capacitance @ Vr, F - Mounting Type Chassis, Stud Mount Package / Case DO-203AB, DO-5, Stud Supplier Device Package DO-5 Operating Temperature - Junction -65°C ~ 200°C |
