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FCPF190N65S3R0L

FCPF190N65S3R0L

For Reference Only

Part Number FCPF190N65S3R0L
PNEDA Part # FCPF190N65S3R0L
Description SUPERFET3 650V TO220F PKG
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 23,004
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 14 - Jun 19 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FCPF190N65S3R0L Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFCPF190N65S3R0L
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FCPF190N65S3R0L, FCPF190N65S3R0L Datasheet (Total Pages: 10, Size: 378.73 KB)
PDFFCPF190N65S3R0L Datasheet Cover
FCPF190N65S3R0L Datasheet Page 2 FCPF190N65S3R0L Datasheet Page 3 FCPF190N65S3R0L Datasheet Page 4 FCPF190N65S3R0L Datasheet Page 5 FCPF190N65S3R0L Datasheet Page 6 FCPF190N65S3R0L Datasheet Page 7 FCPF190N65S3R0L Datasheet Page 8 FCPF190N65S3R0L Datasheet Page 9 FCPF190N65S3R0L Datasheet Page 10

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FCPF190N65S3R0L Specifications

ManufacturerON Semiconductor
SeriesSuperFET® III
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25°C17A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs190mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id4.5V @ 1.7mA
Gate Charge (Qg) (Max) @ Vgs33nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1350pF @ 400V
FET Feature-
Power Dissipation (Max)144W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220F-3
Package / CaseTO-220-3 Full Pack

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