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FDB10AN06A0

FDB10AN06A0

For Reference Only

Part Number FDB10AN06A0
PNEDA Part # FDB10AN06A0
Description MOSFET N-CH 60V 75A TO-263AB
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 5,562
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 14 - Jun 19 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FDB10AN06A0 Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFDB10AN06A0
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FDB10AN06A0, FDB10AN06A0 Datasheet (Total Pages: 11, Size: 265.23 KB)
PDFFDB10AN06A0 Datasheet Cover
FDB10AN06A0 Datasheet Page 2 FDB10AN06A0 Datasheet Page 3 FDB10AN06A0 Datasheet Page 4 FDB10AN06A0 Datasheet Page 5 FDB10AN06A0 Datasheet Page 6 FDB10AN06A0 Datasheet Page 7 FDB10AN06A0 Datasheet Page 8 FDB10AN06A0 Datasheet Page 9 FDB10AN06A0 Datasheet Page 10 FDB10AN06A0 Datasheet Page 11

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FDB10AN06A0 Specifications

ManufacturerON Semiconductor
SeriesPowerTrench®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C12A (Ta), 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Rds On (Max) @ Id, Vgs10.5mOhm @ 75A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs37nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1840pF @ 25V
FET Feature-
Power Dissipation (Max)135W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-263AB
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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