Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

FDB8453LZ

FDB8453LZ

For Reference Only

Part Number FDB8453LZ
PNEDA Part # FDB8453LZ
Description MOSFET N-CH 40V 16.1A TO-263AB
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 7,902
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 21 - May 26 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FDB8453LZ Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFDB8453LZ
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FDB8453LZ, FDB8453LZ Datasheet (Total Pages: 8, Size: 382.32 KB)
PDFFDB8453LZ Datasheet Cover
FDB8453LZ Datasheet Page 2 FDB8453LZ Datasheet Page 3 FDB8453LZ Datasheet Page 4 FDB8453LZ Datasheet Page 5 FDB8453LZ Datasheet Page 6 FDB8453LZ Datasheet Page 7 FDB8453LZ Datasheet Page 8

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • FDB8453LZ Datasheet
  • where to find FDB8453LZ
  • ON Semiconductor

  • ON Semiconductor FDB8453LZ
  • FDB8453LZ PDF Datasheet
  • FDB8453LZ Stock

  • FDB8453LZ Pinout
  • Datasheet FDB8453LZ
  • FDB8453LZ Supplier

  • ON Semiconductor Distributor
  • FDB8453LZ Price
  • FDB8453LZ Distributor

FDB8453LZ Specifications

ManufacturerON Semiconductor
SeriesPowerTrench®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C16.1A (Ta), 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs7mOhm @ 17.6A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs66nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds3545pF @ 20V
FET Feature-
Power Dissipation (Max)3.1W (Ta), 66W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-263AB
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

The Products You May Be Interested In

IXTP1N100P

IXYS

Manufacturer

IXYS

Series

Polar™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

1000V

Current - Continuous Drain (Id) @ 25°C

1A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

15Ohm @ 500mA, 10V

Vgs(th) (Max) @ Id

4.5V @ 50µA

Gate Charge (Qg) (Max) @ Vgs

15.5nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

331pF @ 25V

FET Feature

-

Power Dissipation (Max)

50W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

TSM900N10CP ROG

Taiwan Semiconductor Corporation

Manufacturer

Taiwan Semiconductor Corporation

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

15A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

90mOhm @ 5A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

9.3nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1480pF @ 50V

FET Feature

-

Power Dissipation (Max)

50W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-252, (D-Pak)

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

SSM6K404TU,LF

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

*

FET Type

-

Technology

-

Drain to Source Voltage (Vdss)

-

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

-

Supplier Device Package

-

Package / Case

-

APT20M120JCU2

Microsemi

Manufacturer

Microsemi Corporation

Series

POWER MOS 8™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

1200V

Current - Continuous Drain (Id) @ 25°C

20A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

672mOhm @ 14A, 10V

Vgs(th) (Max) @ Id

5V @ 2.5mA

Gate Charge (Qg) (Max) @ Vgs

300nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

7736pF @ 25V

FET Feature

-

Power Dissipation (Max)

543W (Tc)

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Chassis Mount

Supplier Device Package

SOT-227

Package / Case

SOT-227-4, miniBLOC

STP10N65K3

STMicroelectronics

Manufacturer

STMicroelectronics

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

10A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1Ohm @ 3.6A, 10V

Vgs(th) (Max) @ Id

4.5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs

42nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1180pF @ 25V

FET Feature

-

Power Dissipation (Max)

150W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220

Package / Case

TO-220-3

Recently Sold

MCIMX6G1CVM05AA

MCIMX6G1CVM05AA

NXP

IC MPU I.MC6UL 528MHZ 289BGA

FQA140N10

FQA140N10

ON Semiconductor

MOSFET N-CH 100V 140A TO-3P

MIC5332-SSYMT-TR

MIC5332-SSYMT-TR

Microchip Technology

IC REG LINEAR 3.3V/3.3V 8TMLF

3224W-1-203E

3224W-1-203E

Bourns

TRIMMER 20K OHM 0.25W J LEAD TOP

CNY17F-2

CNY17F-2

Everlight Electronics Co Ltd

OPTOISOLTR 5KV TRANSISTOR 6-DIP

744314150

744314150

Wurth Electronics

FIXED IND 1.5UH 13A 4.3 MOHM SMD

L7805ABV

L7805ABV

STMicroelectronics

IC REG LINEAR 5V 1.5A TO220AB

MMBT2222

MMBT2222

ON Semiconductor

TRANS NPN 30V 0.6A SOT-23

W25Q64FVSSIG

W25Q64FVSSIG

Winbond Electronics

IC FLASH 64M SPI 104MHZ 8SOIC

TL074ID

TL074ID

STMicroelectronics

IC OPAMP JFET 4 CIRCUIT 14SO

74HCT14D

74HCT14D

Toshiba Semiconductor and Storage

IC INVERTER SCHMITT 6CH 14SOIC

ADA4805-2ARMZ-R7

ADA4805-2ARMZ-R7

Analog Devices

IC OPAMP GP 2 CIRCUIT 8MSOP