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FDG311N

FDG311N

For Reference Only

Part Number FDG311N
PNEDA Part # FDG311N
Description MOSFET N-CH 20V 1.9A SC70-6
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 51,930
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 3 - Jun 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FDG311N Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFDG311N
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FDG311N, FDG311N Datasheet (Total Pages: 7, Size: 203.91 KB)
PDFFDG311N Datasheet Cover
FDG311N Datasheet Page 2 FDG311N Datasheet Page 3 FDG311N Datasheet Page 4 FDG311N Datasheet Page 5 FDG311N Datasheet Page 6 FDG311N Datasheet Page 7

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FDG311N Specifications

ManufacturerON Semiconductor
SeriesPowerTrench®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C1.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Rds On (Max) @ Id, Vgs115mOhm @ 1.9A, 4.5V
Vgs(th) (Max) @ Id1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs4.5nC @ 4.5V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds270pF @ 10V
FET Feature-
Power Dissipation (Max)750mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSC-88 (SC-70-6)
Package / Case6-TSSOP, SC-88, SOT-363

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