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FDR858P

FDR858P

For Reference Only

Part Number FDR858P
PNEDA Part # FDR858P
Description MOSFET P-CH 30V 8A SSOT-8
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 4,302
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 25 - May 30 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FDR858P Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFDR858P
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FDR858P, FDR858P Datasheet (Total Pages: 8, Size: 263.59 KB)
PDFFDR858P Datasheet Cover
FDR858P Datasheet Page 2 FDR858P Datasheet Page 3 FDR858P Datasheet Page 4 FDR858P Datasheet Page 5 FDR858P Datasheet Page 6 FDR858P Datasheet Page 7 FDR858P Datasheet Page 8

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FDR858P Specifications

ManufacturerON Semiconductor
Series-
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs19mOhm @ 8A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs30nC @ 5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2010pF @ 15V
FET Feature-
Power Dissipation (Max)1.8W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSuperSOT™-8
Package / Case8-LSOP (0.130", 3.30mm Width)

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